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Analysis of barrier inhomogeneities in AuGe/n-Ge Schottky diode

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Abstract

The barrier inhomogeneities in AuGe/n-Ge Schottky diode have been analyzed by using current–voltage (I–V) measurements over a wide temperature range of 200 to 400 K. The electrical parameters such as ideality factor (n), zero-bias barrier height (ΦBo), and series resistance (Rs) of the diode were found to be strongly temperature dependent. The abnormal increase of the barrier height with temperature was attributed to the existence of barrier height inhomogeneities at the metal/semiconductor interface. Therefore, the conventional and modified Richardson plots were drawn to explain Gaussian distribution (GD) of barrier heights. The modified Richardson plot shows a good linearity over the temperature range. The modified Richardson constant (A*) was found to be 141.49 A cm−2 K−2, which is close to the theoretical value of 140 A cm−2 K−2 for n-Ge. Moreover, the barrier height values obtained from I–V and Norde methods are found to be in good agreement with each other.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    A Buyukbas Ulusan & A Tataroglu

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  1. A Buyukbas Ulusan
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  2. A Tataroglu
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Correspondence to A Buyukbas Ulusan.

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Buyukbas Ulusan, A., Tataroglu, A. Analysis of barrier inhomogeneities in AuGe/n-Ge Schottky diode. Indian J Phys 92, 1397–1402 (2018). https://doi.org/10.1007/s12648-018-1240-2

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  • DOI: https://doi.org/10.1007/s12648-018-1240-2

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