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Dark and illuminated electrical characteristics of Schottky device with Zn-complex interface layer

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Abstract

In this study, metal/Zn-complex/semiconductor (MPS) Schottky photodiodes are fabricated. Interface layer is deposited using a metal-nicotinate/nicotinamide mixed ligand [Zn(C6H6N2O)2(C6H4NO2)2(H2O)]⋅1/2(H2O) complex synthesized with Zn dopant. Different film layers are obtained by dissolving 0.5, 1.0, 2.0, and 3.0 mg Zn-complex in 1 mg spin-coating solution. Thermal analysis techniques are performed between room temperature and 900 °C to study the thermal behavior of the complex as a metal oxide. The surface morphology of the polymeric film layers is investigated by microscopy methods, and the results show relatively smooth and compact surface characteristics for all Zn-complex mass contributions. To evaluate electrical properties of the fabricated device, current–voltage, capacitance–voltage and conductance–voltage measurements are performed under dark and illumination intensities between 20 and 100 mW/cm2 depending on Zn-complex mass at the interface. These measurements indicate light sensitivity of the diodes. In addition, transient characteristics are investigated at these illumination intensities to evaluate photoresponse behaviors. Then, the highest photoconductivity is recorded for 3 mg Zn-complex. The experimental results indicate that the diodes exhibit good photosensitive behavior, and they can be used for opto-electronic applications.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Authors and Affiliations

  1. Department of Energy Systems Engineering, Faculty of Engineering, Giresun University, 28000, Giresun, Turkey

    S. Karadeniz

  2. Department of Physics, Faculty of Arts and Sciences, Hitit University, 19030, Çorum, Turkey

    D. E. Yıldız

  3. Microelectronics, Guidance and Electro-Optics Division, Optical and Optomechanical Design Department, ASELSAN Inc., 06200, Ankara, Turkey

    H. H. Gullu

  4. Department of Chemistry, Faculty of Arts and Sciences, Hitit University, 19030, Çorum, Turkey

    D. A. Kose

  5. Department of Biotechnology, Faculty of Science, Selcuk University, 42030, Konya, Turkey

    A. A. Hussaini & M. Yıldırım

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  1. S. Karadeniz
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Contributions

Conceptualization: [SK, DEY, HHG]; Methodology: [DEY]; Investigation: [DAK, AAH, MY]; Resources [DAK, DEY]; Writing—original draft preparation: [SK, DEY, HHG]; Supervision: [DEY].

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Correspondence to D. E. Yıldız.

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Karadeniz, S., Yıldız, D.E., Gullu, H.H. et al. Dark and illuminated electrical characteristics of Schottky device with Zn-complex interface layer. J Mater Sci: Mater Electron 33, 18039–18053 (2022). https://doi.org/10.1007/s10854-022-08664-1

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