Depth profiling by ion-beam spectrometry P. BørgesenR. BehrischB. M. U. Scherzer Invited Paper Pages: 183 - 195
Electrical properties and defect model of tin-doped indium oxide layers G. FrankH. Köstlin Contributed Papers Pages: 197 - 206
Interstitial iron and iron-acceptor pairs in silicon K. WünstelP. Wagner Contributed Papers Pages: 207 - 212
Strain analysis and optical characterization of LPE InGaAsP laser-confining layers De -Sheng JiangShin -Lin Chang Contributed Papers Pages: 213 - 218
Thermal redistribution of boron implants in bulk silicon and SOS type structures C. D. MaldonadoS. A. Louie Contributed Papers Pages: 219 - 231
Spectral selectivity of nickel and chromium rough surfaces R. T. KivaisiL. Stensland Contributed Papers Pages: 233 - 238
Annealing kinetics of ion-implanted nickel-aluminium alloy J. Hirvonen Contributed Papers Pages: 243 - 246
Binding of gas atoms to extended crystal defects in molybdenum studied by positrons H. E. HansenS. LinderothK. Petersen Contributed Papers Pages: 247 - 250
Deep levels related to transition metals in Si under hydrostatic pressure K. WünstelO. KumagaiW. Jantsch Contributed Papers Pages: 251 - 256
On the trapping of positrons in cadmium in the temperature range from 80 to 330 K W. PuffP. MascherH. Sormann Contributed Papers Pages: 257 - 261
Energy distributions of low energy H ions backscattered from graphite, stainless steel, and molybdenum K. SaikiS. TanakaA. Koma Contributed Papers Pages: 263 - 268