Abstract
The redistribution of boron profiles in bulk silicon and SOS (silicon-on-sapphire) type structures is investigated in this paper. Experimental data on thermally redistributed profiles are correlated with predictions based on a computer program whose numerical algorithm was described in an earlier paper. Three cases were considered which involved the thermal redistribution of 1) a high dose (2×1015 and 5×1014 cm−2) 80keV boron implant in (111) bulk silicon, in an oxidizing ambient of steam at 1000°, 1100°, and 1200°C, respectively; 2) a high dose (2.3×1015 cm−2) 25 keV boron implant in (100) silicon-on-sapphire, in a nonoxidizing ambient of nitrogen at 1000 °C; and 3) a low dose (3.2×1012 cm−2) 150 keV boron implant in (100) bulk silicon, in oxidizing and nonoxidizing ambients that make up the fabrication schedule of an-channel enhancement mode device. For all three cases the overall correlation of computer predictions with experimental data was excellent. Correlations with experimental data based on SUPREM predictions are also included.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A.Grove, O.Leistiko, Jr., C.T.Sah: J. Appl. Phys.35, 2695 (1964)
T.Kato, Y.Nishi: Jpn. J. Appl. Phys.3, 377 (1964)
C.D.Maldonado, G.Mandel, G.Kinoshita: J. Appl. Phys.47, 2269 (1976)
D.A.Antoniadis, S.E.Hansen, R.W.Dutton, A.G.Gonzales, M.Rodoni: “SUPREMI — A Program for IC Process Modeling and Simulation,” SEL-77-006, Stanford Electronics Laboratories, Stanford University, Stanford, California (May 1977)
J.L.Prince, F.N.Schwettmann: J. Electrochem. Soc.121, 705 (1974)
C.D.Maldonado, W.D.Murphy: J. Appl. Phys.49, 4812 (1978)
J.R.Anderson, J.F.Gibbons: Appl. Phys. Lett.28, 184 (1976)
B.E.Deal: J. Electrochem. Soc.110, 527 (1963)
B.E.Deal, A.S.Grove: J. Appl. Phys.36, 3770 (1965)
E.A.Irene: J. Electrochem. Soc.121, 1613 (1974)
E.A.Irene, Y.J. van der Meulen: J. Electrochem. Soc.123, 1380 (1976)
B.E.Deal, M.Sklar: J. Electrochem. Soc.112, 430 (1965)
E.A.Irene, D.W.Dong: J. Electrochem. Soc.125, 1146 (1978)
A.C.Hindmarsh: Lawrence Livermore Laboratory Report UCID-30059, Rev. 1, (March 1975); available through the Argonne Code Center, Argonne National Laboratory, Argonne, 111., The ACC No. is 661
C.W.Gear:Numerical Initial Value Problems in Ordinary Differential Equations (Prentice-Hall, Englewood Cliffs, NJ 1971)
J.Lindhard, M.Scharff, H.E.Schiott, K.Dan Vidensk: Selsk. Mat. Fys. Medd.33, 1 (1963)
F.J.Morin, J.P.Maita: Phys. Rev.96, 28 (1954)
D.A.Antoniades, A.G.Gonzales, R.W.Dutton: J. Electrochem. Soc.125, 813 (1978)
D.A.Antoniades, A.M.Lin, R.W.Dutton: Appl. Phys. Lett.33, 15 (1978)
J.W.Colby, L.E.Katz: J. Electrochem. Soc.123, 409 (1976)
J.F.Gibbons, W.S.Johnson, S.Mylroie:Projected Range Statistics (Dowden, Hutchinson and Ross, Stroudsbourg, PA 1975)