Abstract
Problems caused by the statistical variation of the number of exposing ions in ionbeam lithography are discussed. Using Poisson statistics, the minimum dose required for exposure as a function of resist sensitivity and minimum feature size is calculated. It is found that, although ion-beam resists show a very high sensitivity of 1011 to 1013,cm−2, it would be possible to use still more sensitive resists and obtain submicron linewidth resolution.
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R.L.Seliger, R.L.Kubena, R.O.Olney, J.W.Ward, V.Wang: J. Vac. Sci. Technol.16, 1610 (1980)
D. B.Rensch, R. L.Seliger, G.Csanky, R. D.Olney, H. L.Stover: J. Vac. Sci. Technol.16, 1897 (1979)
M.Komuro, N.Atoda, H.Kawakatsu: J.Electrochem. Soc.126, 483 (1979)
T.M.Hall, A.Wagner, L.F.Thompson: J. Vac. Sci. Technol.16, 1889 (1979)
K.Morikawa, H.Aritome, S.Namba: Microcircuits Engineering, Aachen (1979)
H.Ryssel, H.Kranz, K.Haberger, J.Bosch: Microcircuit Engineering, Amsterdam (1980)
G.R.Hanson, B.M.Siegel: J. Vac. Sci. Technol.16, 1875 (1979)
R.Clampitt, D.K.Jefferies: Inst. Phys. Conf. Series No. 38, p. 12 ed. by K.G.Stephens, I.H.Wilson, and J.L.Moruzzi (1979)
G.Stengel, R.Kaitna, H.Löschner, P.WoIf, R.Sacher: J. Vac. Sci. Technol.16, 1883 (1979)
J.L.Bartelt, C.W.Slayman, J.E.Wood, J.Y.Chen, C.M.McKenna, C.P.Minning, J.F.Coakley, R.E.Holman, C.M.Perygo: J. Vac. Sci. Technol.19, 1166 (1981)
L.Csepregi, F.Iberl, P.Eichinger: Microcircuit Engineering, Amsterdam (1980)
E.Munro: InAdvances in Electronics and Electron Physics, Supplement 13 B, ed. by A.Septier (Academic Press, New York 1980) p. 74
H.C.Pfeiffer: J. Vac. Sci. Technol.15, 887 (1978)
D.F.Kyser, R.Pyle: IBM J. Res. Dev.24, 426 (1980)
K.Karapiperis, L.Adesida, S.A.Lee, E.D.Wolf: J. Vac. Sci. Technol.19, 1259 (1981)
H.Ryssel, K.Haberger: Microcircuit Engineering, Lausanne (1981)
M.Abramowitz, I.A.Segun:Handbook of Mathematical Tables (Dover Publications, New York 1964)
M.P.Lepselter, W.T.Lynch: InVLSI Electronics Microstructure Science, Vol. 1, by N.G.Einspruch (Academic Press, New York 1981)