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Ion beam exposure of resists

I. Statistical limitations

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Abstract

Problems caused by the statistical variation of the number of exposing ions in ionbeam lithography are discussed. Using Poisson statistics, the minimum dose required for exposure as a function of resist sensitivity and minimum feature size is calculated. It is found that, although ion-beam resists show a very high sensitivity of 1011 to 1013,cm−2, it would be possible to use still more sensitive resists and obtain submicron linewidth resolution.

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Ryssel, H., Prinke, G., Bernt, H. et al. Ion beam exposure of resists. Appl. Phys. A 27, 239–241 (1982). https://doi.org/10.1007/BF00619085

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  • DOI: https://doi.org/10.1007/BF00619085

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