1. Nitrogen implantation into GaP: Damage and nitrogen location studies

   • D. A. Thompson
   • S. S. Johar
   • J. Shewchun

   OriginalPaper Pages: 195 - 207

2. Electrical properties and luminescence of CuInSe₂

   • P. Migliorato
   • J. L. Shay
   • H. M. Kasper

   OriginalPaper Pages: 209 - 222

3. Faraday rotation, optical isolation and modulation at 10.6 μm using hot-pressed CdCr₂S₄ and CoCr₂S₄

   • S. D. Jacobs

   OriginalPaper Pages: 223 - 241

4. The integral lens coupled LED

   • F. D. King
   • A. J. SpringThorpe

   OriginalPaper Pages: 243 - 253

5. The EFG process applied to the growth of silicon ribbons*

   • J. C. Swartz
   • T. Surek
   • B. Chalmerst

   OriginalPaper Pages: 255 - 279

6. The carrier lifetime of heat-treated silicon crystals

   • K. Graff
   • H. Pieper

   OriginalPaper Pages: 281 - 298

7. Pb_1-xSn_xTe epitaxial layers prepared by the hot-wall technique

   • I. Kasai
   • J. Hornung
   • J. Baars

   OriginalPaper Pages: 299 - 311

8. Silicon epitaxial growth using dichlorosilane

   • P. H. Robinson
   • N. Goldsmith

   OriginalPaper Pages: 313 - 328

9. Sem, auger spectroscopy and ion backscattering techniques applied to analyses of Au/refractory metallizations

   • A. Christou
   • L. Jarvis
   • J. K. Hirvonen

   OriginalPaper Pages: 329 - 345

10. Infrared transmission in GE-SB-SE glasses

    • M. D. Rechtin
    • A. R. Hilton
    • D. J. Hayes

    OriginalPaper Pages: 347 - 362

11. Growth and properties of VPE GaP for green LEDs

    • G. B. Stringfellow
    • M. E. Weiner
    • R. A. Burmeister

    OriginalPaper Pages: 363 - 387

12. Liquid encapsulated czochralski pulling of InP crystals

    • K. J. Bachmann
    • E. Buehler
    • A. R. Strnad

    OriginalPaper Pages: 389 - 406

13. Announcement of the 1975 electronic materials conference

    Announcement Pages: 407 - 408