Abstract
We have studied the electrical properties and luminescence spectra of melt-grown CuInSe2 single crystals and the doping of the crystals with intrinsic defects and extrinsic impurities. The preparation and the properties of p-n junctions are also discussed. We find that the low temperature photoluminescence spectra of crystals as-grown or annealed between 400 and 700 C are characteristic of the conductivity type. At 77 K, p-type crystals emit in a band peaked at 1.00 eV (type A spectrum) whereas the emission of n-type crystals peaks at 0.93 eV (type B spectrum). Type A and type B spectra can be interchanged by alternate anneals in minimum or maximum Se pressure. Type B emission dominates the electroluminescence spectrum of p-n junctions. These features are explained by the appearing and disappearing of a donor level as a consequence of annealing in vacuum or in Se atmosphere. We find that Zn and Cd act as donors. Crystals doped with these impurities have electron concentrations above 1018 cm−3. Zn-dopped samples exhibit a very broad recombination band below the bandgap in photoluminescence both at 77 and 300 K.
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Migliorato, P., Shay, J.L. & Kasper, H.M. Electrical properties and luminescence of CuInSe2 . J. Electron. Mater. 4, 209–222 (1975). https://doi.org/10.1007/BF02655402
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DOI: https://doi.org/10.1007/BF02655402