Abstract
The growth of bulk indium phosphide crystals via liquid encapsulated Czochralski pulling from both stoichiometric and nonstoichiometric melts is described. Nominally un-doped crystals with carrier concentration ND-NA = 6 × 1015 cm−3 and Hall mobilities of 4510 cm2/Vsec at room temperature were grown. Also, we prepared Zn-or Cd-doped p-type crystals in the range 1016 ≤ NA-ND ≤ 1018 cm−3 with Hall mobilities ≤ 130 cm2/Vsec and Sn-doped n-type crystals in the range 4 × 1017 ≤ NA-ND ≤ 1018 cm-3 with Hall mobilities ≤ 2400 cm2/Vsec. The dislocation density of LEC pulled InP crystals is typically ~ 104 cm−2.
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Bachmann, K.J., Buehler, E., Shay, J.L. et al. Liquid encapsulated czochralski pulling of InP crystals. J. Electron. Mater. 4, 389–406 (1975). https://doi.org/10.1007/BF02655412
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DOI: https://doi.org/10.1007/BF02655412