Abstract
A new technique is described which enables increased coupling efficiencies to be obtained between N-side emitting, high radiance, double heterostructure (GaAs/GaAlAs) LED’s and multimode glass fibers. The technique consists of creating by means of photolithographically defined etching and epitaxial regrowth, a large number of converging micro lens structures in the emitting surface of the semiconductor. Lensed LED’s have been fabricated which exhibit an effective brightness of 75 W/sr-cm2 at a current density of 3.4 KA/cm2 . The new devices represent an improvement in certain applications of 40 to 100% over similar non-lensed structures.
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King, F.D., SpringThorpe, A.J. The integral lens coupled LED. J. Electron. Mater. 4, 243–253 (1975). https://doi.org/10.1007/BF02655404
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DOI: https://doi.org/10.1007/BF02655404