1. Foreword

   • Robert M. Biefeld
   • Christine A. Wang

   EditorialNotes Pages: 1 - 1

2. Model development of GaN MOVPE growth chemistry for reactor design

   • Jingxi Sun
   • J. M. Redwing
   • T. F. Kuech

   Special Issue Paper Pages: 2 - 9

3. InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

   • X. Zhang
   • P. D. Dapkus
   • N. P. Kobayashi

   Special Issue Paper Pages: 10 - 14

4. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and Al_xGa_1−xN

   • G. Parish
   • S. Keller
   • U. K. Mishra

   Special Issue Paper Pages: 15 - 20

5. The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

   • A. E. Wickenden
   • D. D. Koleske
   • W. J. Moore

   Special Issue Paper Pages: 21 - 26

6. The hall mobility and its relationship with persistent photoconductivity of undoped GaN

   • W. Wang
   • S. J. Chua
   • G. Li

   Special Issue Paper Pages: 27 - 30

7. Characterization of undoped and silicon-doped InGaN/GaN single quantum wells

   • B. Schineller
   • P. H. Lim
   • K. Heime

   Special Issue Paper Pages: 31 - 36

8. Migration effect on semiconductor surface for narrow-stripe selective MOVPE

   • Y. Sakata
   • K. Komatsu

   Special Issue Paper Pages: 37 - 41

9. MOVPE grown Ga_1−xIn_xAs solar cells for GaInP/GaInAs tandem applications

   • F. Dimroth
   • P. Lanyi
   • A. W. Bett

   Special Issue Paper Pages: 42 - 46

10. High C-doping of MOVPE grown thin Al_xGa_1−xAs layers for AlGaAs/GaAs interband tunneling devices

    • F. Dimroth
    • U. Schubert
    • A. W. Bett

    Special Issue Paper Pages: 47 - 52

11. Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

    • A. Knauer
    • F. Bugge
    • M. Weyers

    Special Issue Paper Pages: 53 - 56

12. MOVPE growth of AlGaAs/GaInP diode lasers

    • F. Bugge
    • A. Knauer
    • M. Weyers

    Special Issue Paper Pages: 57 - 61

13. Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

    • Wilson De Carvalho Jr.
    • Mario Tosi Furtado
    • Mônica Alonso Cotta

    Special Issue Paper Pages: 62 - 68

14. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

    • Y. Liu
    • C. R. Gorla
    • M. Wraback

    Special Issue Paper Pages: 69 - 74

15. Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

    • Q. Yang
    • D. Scott
    • G. E. Stillman

    Special Issue Paper Pages: 75 - 79

16. (Al)GaInP multiquantum well LEDs on GaAs and Ge

    • P. Modak
    • M. D’Hondt
    • P. Demeester

    Special Issue Paper Pages: 80 - 85

17. A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures

    • G. M. Peake
    • L. Zhang
    • S. D. Hersee

    Special Issue Paper Pages: 86 - 90

18. Exploring new active regions for type I InAsSb strained-layer lasers

    • R. M. Biefeld
    • J. D. Phillips
    • S. R. Kurtz

    Special Issue Paper Pages: 91 - 93

19. MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

    • K. Haberland
    • A. Bhattacharya
    • W. Richter

    Special Issue Paper Pages: 94 - 98

20. GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

    • D. A. Allwood
    • P. C. Klipstein
    • P. J. Walker

    Special Issue Paper Pages: 99 - 105

21. Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

    • K. A. Bell
    • M. Ebert
    • D. E. Aspnes

    Special Issue Paper Pages: 106 - 111

22. Step structure of GaInAsSb grown by organometallic vapor phase epitaxy

    • C. A. Wang

    Special Issue Paper Pages: 112 - 117

23. Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs

    • W. Reichert
    • R. M. Cohen

    Special Issue Paper Pages: 118 - 128

24. Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

    • Georg Bernatz
    • Siegfried Nau
    • Wolfgang Stolz

    Special Issue Paper Pages: 129 - 133

25. Surfactant effects of dopants on ordering in GaInP

    • G. B. Stringfellow
    • R. T. Lee
    • T. Y. Seong

    Special Issue Paper Pages: 134 - 139

26. Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces

    • Junichi Motohisa
    • Chiharu Tazaki
    • Takashi Fukui

    Special Issue Paper Pages: 140 - 145

27. A comparison of TMG with TEG for the growth of In_xGa_1−xAs

    • Richard William Glew
    • Karen Grim-Bogdan
    • Shohei Nakahara

    Special Issue Paper Pages: 146 - 150

28. Next generation adduct purification techniques for low oxygen content metal alkyls

    • K. M. Coward
    • A. C. Jones
    • T. Martin

    Special Issue Paper Pages: 151 - 155

29. Properties of solution TMI as an OMVPE source

    • M. S. Ravetz
    • L. M. Smith
    • R. T. Blunt

    Special Issue Paper Pages: 156 - 160

30. 1,1-Dimethylhydrazine as a high purity nitrogen source for MOVPE-water reduction and quantification using nuclear magnetic resonance, gas chromatography-atomic emission detection spectroscopy and cryogenic-mass spectroscopy analytical techniques

    • R. Odedra
    • L. M. Smith
    • J. Cheng

    Special Issue Paper Pages: 161 - 164

31. Optical characterization of (GaIn)(NAs)/GaAs MQW structures

    • J. Koch
    • F. Höhnsdorf
    • W. Stolz

    Special Issue Paper Pages: 165 - 168

32. In-situ post annealing treatment of nitrogen-doped ZnSe grown using photo-assisted MOVPE

    • M. U. Ahmed
    • S. J. C. Irvine

    Special Issue Paper Pages: 169 - 172

33. Growth and photoluminescence study of ZnSe quantum dots

    • Y. H. Chang
    • M. H. Chieng
    • Y. F. Chen

    Special Issue Paper Pages: 173 - 176

34. Thermoelectric quantum-dot superlattices with high ZT

    • T. C. Harman
    • P. J. Taylor
    • M. P. Walsh

    Letter Pages: L1 - L2