Abstract
(GaIn)(NAs)/GaAs multiple quantum well (MQW) structures with high structural perfection as determined from high-resolution x-ray diffraction (XRD) analysis have been deposited by low-temperature metal organic vapor phase epitaxy (MOVPE) at 525°C using triethylgallium (TEGa) and trimethylindium (TMIn) in combination with 1,1-dimethylhydrazine (UDMHy) and tertiarybutylarsine (TBAs). The optical characteristics of as-grown MQW structures as a function of quaternary composition and of well width are established by PL spectroscopy at 300 K. With increasing N-content a reduction in PL efficiency and an increase in PL linewidth is observed. This behavior might be correlated to an increase in defect density with increasing N-content and/or to a bandstructure effect in this novel material system. For an increase in Inconcentration the tendency for a reduction in the extreme bowing of the band gap is detected. Strong quantization effects are observed for well widths below 5 nm only in this novel MQW system, which indicates significantly larger electron masses as compared to N-free (GaIn)As.
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References
M. Kondow, T. Kitatani, S. Nakatsuka, M.C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, IEEE J. Selected Topics in Quantum Electronics 3, 719 (1997).
A. Ougazzaden, Y. Le Bellego, E.V.K. Rao, M. Juhel, and L. Leprince, Appl. Phys. Lett. 70, 2861 (1997).
F. Höhnsdorf, J. Koch, C. Agert, and W. Stolz, J. Cryst. Growth 195, 391 (1998).
H. Saito, T. Makimoto, and N. Kobayashi, J. Cryst. Growth 195, 416 (1998).
T. Miyamoto, S. Sato, Z. Pan, D. Schlenker, F. Koyama, and K. Iga, J. Cryst. Growth 195, 421 (1998).
R. Bhat, C. Caneau, L. Salamanca-Riba, W. Bi, and C. Tu, J. Cryst. Growth 195, 427 (1998).
L. Tapfer, M. Ospelt, and H. von Knel, J. Appl. Phys. 67, 1298 (1990).
M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, Jpn. J. Appl. Phys. 35, 5711 (1996).
K. Nakahara, M. Kondow, T. Kitatani, M.C. Larson, and K. Uomi, IEEE Photonics Technol. Lett. 10, 487 (1998).
S. Sato and S. Satoh, (Postdeadline paper PD 5 presented at IEEE 16th Int. Semiconductor Laser Conf., Nara, Japan, 1998).
F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, and M. Druminski, Electron. Lett. 35, 571 (1999).
C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, D. Karaiskaj, M Hofmann, W. Stolz, and W.W. Rühle, Appl. Phys. Lett. 74, 2271 (1999).
C. Ellmers, M.R. Hofmann, M. Hilpert, D. Kariaskaj, S. Leu, W. Stolz, and W.W. Rühle, Appl. Phys. Lett. 74, 1367 (1999).
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Koch, J., Höhnsdorf, F. & Stolz, W. Optical characterization of (GaIn)(NAs)/GaAs MQW structures. J. Electron. Mater. 29, 165–168 (2000). https://doi.org/10.1007/s11664-000-0114-4
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DOI: https://doi.org/10.1007/s11664-000-0114-4