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Migration effect on semiconductor surface for narrow-stripe selective MOVPE

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Abstract

Anovelmethod for deriving the migration length (Lm) on a semiconductor surface is discussed. Lm is the most important parameter but it has not been precisely investigated for narrow-stripe selective-MOVPE. Lm can be deduced from the relationship between the (111) B-facet length and the (100)-facet length in the edge-growth region formed at the side of SiO2 masks. The two lengths have a linear relationship, so Lm on (100) surface can be obtained from an extrapolation of this relationship. This method was used to evaluate Lm for many kinds of the growth conditions. The maximum Lm and the precursors’ incorporation life-time were also deduced using the proposed method.

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Authors and Affiliations

  1. ULSI Device Development Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu, 520-0833, Shiga, Japan

    Y. Sakata & K. Komatsu

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  1. Y. Sakata
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  2. K. Komatsu
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Sakata, Y., Komatsu, K. Migration effect on semiconductor surface for narrow-stripe selective MOVPE. J. Electron. Mater. 29, 37–41 (2000). https://doi.org/10.1007/s11664-000-0091-7

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  • DOI: https://doi.org/10.1007/s11664-000-0091-7

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