Abstract
We present a detailed study of the MOVPE growth of 800 nm diode laser structures based on the combination of a GaAsP quantum well with well-established AlGaAs waveguide structures. By optimizing the strain and thickness of the quantum well highly-reliable diode lasers with low threshold current and high efficiency were demonstrated. 100 µm aperture “broad area” devices mounted epi-side up achieve a CW output power of 8.9 W with a wall-plug efficiency of 50%. These output powers represent record values for diode lasers in this wavelength range. Reliability measurements at 1.5 W and 50°C ambient temperature suggest lifetimes >10 000 h.
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Knauer, A., Bugge, F., Erbert, G. et al. Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation. J. Electron. Mater. 29, 53–56 (2000). https://doi.org/10.1007/s11664-000-0094-4
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DOI: https://doi.org/10.1007/s11664-000-0094-4