1. Foreword

   • Ishwara B. Bhat

   EditorialNotes Pages: 581 - 581

2. Prospects of uncooled HgCdTe detector technology

   • W. E. Tennant
   • S. Cabelli
   • K. Spariosu

   Special Issue Paper Pages: 582 - 588

3. MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K

   • P. Mitra
   • F. C. Case
   • P. W. Norton

   Special Issue Paper Pages: 589 - 595

4. Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K

   • S. P. Tobin
   • M. H. Weiler
   • P. W. Norton

   Special Issue Paper Pages: 596 - 602

5. Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

   • C. A. Musca
   • D. A. Redfern
   • J. Bajaj

   Special Issue Paper Pages: 603 - 610

6. Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg_1−xCd_xTe detectors

   • A. I. D’Souza
   • P. S. Wijewarnasuriya
   • J. M. Arias

   Special Issue Paper Pages: 611 - 616

7. Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays

   • C. A. Musca
   • J. M. Dell
   • C. Bruce

   Special Issue Paper Pages: 617 - 623

8. Improved operability in Hg_1−xCd_xTe detector arrays

   • M. A. Hutchins
   • F. T. J. Smith
   • P. W. Norton

   Special Issue Paper Pages: 624 - 629

9. Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

   • Antoni Rogalski
   • Robert Ciupa

   Special Issue Paper Pages: 630 - 636

10. Low temperature thermal annealing effects in bulk and epitaxial Cd_xHg_1−xTe

    • P. Capper
    • C. D. Maxey
    • D. Shaw

    Special Issue Paper Pages: 637 - 648

11. Microscopic defects on MBE grown LWIR Hg_1−xCd_xTe material and their impact on device performance

    • P. S. Wijewarnasuriya
    • M. Zandian
    • A. I. D’Souza

    Special Issue Paper Pages: 649 - 653

12. The effects of short-range order and natural microinhomogeneities on the FIR optical properties of Cd_xHg_1−xTe

    • M. I. Vasilevskiy
    • A. I. Belogorokhov
    • M. J. M. Gomes

    Special Issue Paper Pages: 654 - 661

13. New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys

    • C. Chauvet
    • V. Bousquet
    • J. P. Faurie

    Special Issue Paper Pages: 662 - 665

14. Study of CdSSe:V and CdMnTe:V photorefractive effect

    • K. Chattopadhyay
    • K. M. Pour
    • A. Burger

    Special Issue Paper Pages: 666 - 669

15. VUV-ellipsometry on Be_xZn_1−xSe and BeTe

    • K. Wilmers
    • T. Wethkamp
    • M. Cardona

    Special Issue Paper Pages: 670 - 677

16. Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe:Cr²⁺

    • C. I. Rablau
    • J. -O. Ndap
    • N. C. Giles

    Special Issue Paper Pages: 678 - 682

17. Recent progress in CdZnTe crystals

    • A. Koyama
    • A. Hichiwa
    • R. Hirano

    Special Issue Paper Pages: 683 - 687

18. Analysis of CZT crystals and detectors grown in russia and the ukraine by high-pressure bridgman methods

    • H. Hermon
    • M. Schieber
    • H. Yoon

    Special Issue Paper Pages: 688 - 694

19. Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications

    • N. Lovergine
    • P. Prete
    • A. M. Mancini

    Special Issue Paper Pages: 695 - 699

20. Development of dry processing techniques for CdZnTe surface passivation

    • M. J. Mescher
    • T. E. Schlesinger
    • R. B. James

    Special Issue Paper Pages: 700 - 704

21. MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

    • T. J. de Lyon
    • J. E. Jensen
    • G. M. Venzor

    Special Issue Paper Pages: 705 - 711

22. Insights into MOCVD process control as revealed by laser interferometry

    • A. Stafford
    • S. J. C. Irvine
    • J. Bajaj

    Special Issue Paper Pages: 712 - 717

23. CdZnTe substrate producibility and its impact on IRFPA yield

    • Sanghamitra Sen
    • Herbert L. Hettich
    • Eugene O. McLean

    Special Issue Paper Pages: 718 - 725

24. Cadmium zinc telluride substrate growth, characterization, and evaluation

    • M. Kestigian
    • A. B. Bollong
    • H. Wadley

    Special Issue Paper Pages: 726 - 731

25. Microstructural development of directionally solidified Hg_1−xZn_xSe alloys

    • S. D. Cobb
    • F. R. Szofran
    • S. L. Lehoczky

    Special Issue Paper Pages: 732 - 739

26. Initial evaluation of a valved Te source for MBE growth of HgCdTe

    • D. D. Edwall
    • D. B. Young
    • Scott Priddy

    Special Issue Paper Pages: 740 - 742

27. In-Situ monitoring of temperature and alloy composition of Hg_1−xCd_xTe using FTIR spectroscopic techniques

    • M. Daraselia
    • C. H. Grein
    • H. D. Shih

    Special Issue Paper Pages: 743 - 748

28. Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE

    • G. L. Olson
    • J. A. Roth
    • B. Johs

    Special Issue Paper Pages: 749 - 755

29. Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe

    • F. Aqariden
    • W. M. Duncan
    • M. J. Bevan

    Special Issue Paper Pages: 756 - 759

30. Optical properties of Cd_0.9Zn_0.1 Te studied by variable angle spectroscopic ellipsometry between 0.75 and 6.24 eV

    • H. W. Yao
    • J. C. Erickson
    • H. Hermon

    Special Issue Paper Pages: 760 - 765

31. Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

    • E. Y. Lee
    • R. B. James
    • H. Hermon

    Special Issue Paper Pages: 766 - 773

32. Laser ablation sampling for induction coupled plasma source quadrupole mass spectrometry of Cd-Zn-Te materials

    • Colin Hackett
    • Haim Hermon
    • Ralph James

    Special Issue Paper Pages: 774 - 784

33. Effect of compositional disorder on the optical properties of Cd_1−xZn_xTe

    • K. Suzuki
    • S. Seto
    • J. Gutowski

    Special Issue Paper Pages: 785 - 788

34. Arsenic incorporation in MBE grown Hg_1−xCd_xTe

    • C. H. Grein
    • J. W. Garland
    • M. Fuchs

    Special Issue Paper Pages: 789 - 792

35. New techniques in SIMS analysis of HgCdTe materials

    • Larry Wang
    • Lily H. Zhang
    • Jun Li

    Special Issue Paper Pages: 793 - 798

36. Arsenic incorporation during MBE growth of HgCdTe

    • M. A. Berding
    • A. Sher

    Special Issue Paper Pages: 799 - 803

37. Can studies of the II-VIs profit from the use of synchrotron radiation and the DOE financial support thereof?

    • William E. Spicer
    • Alberto Herrera-Gômez
    • Piero Pianetta

    Special Issue Paper Pages: 804 - 809

38. X-ray photoelectron spectroscopy study of oxide and Te overlayers on as-grown and etched HgCdTe

    • L. S. Hirsch
    • R. Haakenaasen
    • T. H. Myers

    Special Issue Paper Pages: 810 - 816

39. Use of electron cyclotron resonance plasmas to prepare CdZnTe (211)B substrates for HgCdTe molecular beam epitaxy

    • J. N. Johnson
    • L. A. Almeida
    • J. H. Dinan

    Special Issue Paper Pages: 817 - 820

40. Optimization of dry etch process conditions for HgCdTe detector arrays

    • Peter O’Dette
    • Gary Tarnowski
    • Paul Lovecchio

    Special Issue Paper Pages: 821 - 825

41. Valence band offset in HgTe/Hg_1−xCd_xTe superlattices

    • C. R. Becker
    • V. Latussek
    • G. Landwehr

    Special Issue Paper Pages: 826 - 829

42. Surface second harmonic generation in the characterization of anodic sulphide and oxide films on Hg_1−xCd_xTe (MCT)

    • L. E. A. Berlouis
    • A. W. Wark
    • P. F. Brevet

    Special Issue Paper Pages: 830 - 837

43. Resistivity variation of semi-insulating Cd_1−xZn_x Te in relationship to alloy composition

    • H. Yoon
    • M. S. Goorsky
    • R. B. James

    Special Issue Paper Pages: 838 - 842

44. Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, spectrumplus and coplanar grid

    • E. Y. Lee
    • R. B. James

    Special Issue Paper Pages: 843 - 849

45. Interrelations between defects in the Hg_1−xCd_xTe epilayers and their measured lattice parameters and composition

    • N. Mainzer
    • E. Lakin
    • E. Zolotoyabko

    Special Issue Paper Pages: 850 - 853

46. Dependency of p-n junction depth on ion species implanted in HgCdTe

    • H. Ebe
    • M. Tanaka
    • Y. Miyamoto

    Special Issue Paper Pages: 854 - 857

47. Improvement of nonlinearity and extension of wavelength region using tandem (PV+PC) type HgCdTe detector (Dual-MCT) in FTIR spectrometer

    • O. Abe
    • K. Kawasaki
    • M. Wakaki

    Special Issue Paper Pages: 858 - 863

48. Large volume imaging arrays for gamma-ray spectroscopy

    • T. E. Schlesinger
    • B. Brunett
    • A. Tsigelman

    Special Issue Paper Pages: 864 - 868