Abstract
The valence band offset (Λ) between HgTe and CdTe has been determined by means of an optical investigation of (112)B oriented HgTe/Hg1−xCdxTe superlattices. Based on the fact that the difference in energy between the first heavy hole and the first light hole subband is to a good approximation due primarily to Λ, it has been shown that Λ=580±40 meV at 5K. In addition Λ has a significant temperature dependence with a linear coefficient of −0.34±0.02 meV/K, i.e., Λ is 480±40 meV at room temperature.
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Becker, C.R., Latussek, V., Li, M. et al. Valence band offset in HgTe/Hg1−xCdxTe superlattices. J. Electron. Mater. 28, 826–829 (1999). https://doi.org/10.1007/s11664-999-0078-y
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DOI: https://doi.org/10.1007/s11664-999-0078-y