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Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

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Abstract

Low temperature thermal treatments of CdHgTe, normally in the presence of mercury vapor, are still used on both bulk samples and single and multi-layer epitaxial layers to modify or control the electrical properties. This paper reviews the recent literature reports in this area and develops the existing model to explain certain features of the p to n conversion process. A brief update on compositional interdiffusion at low temperatures is given which shows significant disagreement within literature values. In addition, the paper will describe and comment on some as yet unexplained results (interdiffusion and electrical behavior) following low temperature treatments in both liquid phase and metalorganic vapor phase epitaxial (LPE and MOVPE) layers.

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Author notes

  1. E. S. O’Keefe

    Present address: DERA, GU14 0LX, Farnborough, Hants, UK

Authors and Affiliations

  1. GEC-Marconi Infra-Red Limited, P.O. Box 217, SO15 0EG, Millbrook, Southampton, Hants, UK

    P. Capper, C. D. Maxey, C. L. Jones, J. E. Gower & E. S. O’Keefe

  2. Department of Physics, Hull University, HU6 7RX, Hull, UK

    D. Shaw

Authors
  1. P. Capper
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  2. C. D. Maxey
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  3. C. L. Jones
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  4. J. E. Gower
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  5. E. S. O’Keefe
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  6. D. Shaw
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Capper, P., Maxey, C.D., Jones, C.L. et al. Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe. J. Electron. Mater. 28, 637–648 (1999). https://doi.org/10.1007/s11664-999-0047-5

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  • DOI: https://doi.org/10.1007/s11664-999-0047-5

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