Efficiency-limiting defects in silicon solar cell material Jeff BaileyScott A. Mc HugoEicke R. Weber OriginalPaper Pages: 1417 - 1421
The structural, optical, and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films L. FengD. MaoJ. U. Trefny OriginalPaper Pages: 1422 - 1427
Dry etching of InGaAlP alloys in Cl2/Ar high ion density plasmas J. HongJ. W. LeeF. Ren OriginalPaper Pages: 1428 - 1433
Low-pressure pyrolysis studies of a new phosphorus precursor: Tertiarybutylbis(dimethylamino)phosphine C. W. HillR. W. GedridgeL. P. Sad Wick OriginalPaper Pages: 1434 - 1438
Phase equilibria in InAsSbP quaternary alloys grown by liquid phase epitaxy M. R. WilsonA. KrierY. Mao OriginalPaper Pages: 1439 - 1445
Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures R. E. SahJ. D. RalstonW. Benz OriginalPaper Pages: 1446 - 1450
The modification of electrophotographic and mechanical properties of organic photoconductors by ultra-violet irradiation C. K. H. WongY. C. ChanD. S. Chiu OriginalPaper Pages: 1451 - 1457
Photoluminescence and raman scattering characterization of silicon-doped In0.52Al0.48As grown on InP (100) substrates by molecular beam epitaxy S. F. YoonY. B. MiaoS. Swaminathan OriginalPaper Pages: 1458 - 1462
Al-Ga-As-dopant phase-equilibria for liquid phase epitaxy C. AlgoraM. A. Martínez OriginalPaper Pages: 1463 - 1468
Incorporation of group V elements in Gaxin1−xAsyP1−y grown by gas source molecular beam epitaxy Tsuen-Lin LeeJin-Shung LiuHao-Hsiung Lin OriginalPaper Pages: 1469 - 1473
Formation of ohmic contacts to p-ZnTe J. T. TrexlerJ. J. FijolP. H. Holloway OriginalPaper Pages: 1474 - 1477
Microstructural analysis of a Au/Pt/Pd/Zn ohmic contact to an AlGaAs/GaAs heterojunction bipolar transistor P. JianD. G. IveyT. P. Lester OriginalPaper Pages: 1478 - 1486
The scaling of CVD rotating disk reactors to large sizes and comparison with theory Alan G. ThompsonR. A. StallG. H. Evans OriginalPaper Pages: 1487 - 1494
Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown Q. WahabM. KarlsteenJ. -E. Sundgren OriginalPaper Pages: 1495 - 1500
Efficient 2.0–2.6 μm wavelength photoluminescence from narrow bandgap InAsP/InGaAs double heterostructures grown on InP substrates D. GarbuzovD. -S. KimM. Cohen OriginalPaper Pages: 1501 - 1505
Comparative measurements of the electron emission behavior of Si3N4-InGaAs interfaces prepared by remote and direct PECVD P. J. M. ParmiterJ. G. Swanson OriginalPaper Pages: 1506 - 1513
Growth, characterization and modeling of InxGa1−xP stripes by selective-area MOCVD J. F. KluenderA. M. JonesJ. J. Coleman OriginalPaper Pages: 1514 - 1520
Phase modulated ellipsometry used for composition control during MBE growth of CdHgTe: An analysis of instrumental factors and an assessment of the material produced R. H. HartleyM. A. FolkardF. Grainger OriginalPaper Pages: 1521 - 1526
Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells Toshiki MakimotoNaoki Kobayashi OriginalPaper Pages: 1527 - 1530
Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction O. H. GokceJ. T. SearsT. Sahin OriginalPaper Pages: 1531 - 1538
Co-pyrolysjs of DIPSbH and TMIn Y. S. ChunG. B. StringfellowR. W. Gedridge OriginalPaper Pages: 1539 - 1544
Structural characterization of bulk GaN crystals grown under high hydrostatic pressure Zuzanna Liliental-WeberC. KisielowskiS. Porowski OriginalPaper Pages: 1545 - 1550
Optimization of the spacer layer thickness in AlInAs/InGaAs/InP MODFETs Matthew L. SeafordGlenn MartinScott Massie OriginalPaper Pages: 1551 - 1553
Mass spectroscopy study of GaN metalorganic chemical vapor deposition Yongjo PakkDimitris Pavlidis OriginalPaper Pages: 1554 - 1560
A model of the interdiffused multilayer process Spyros A. SvoronosWilbur W. WooJagmohan Bajaj OriginalPaper Pages: 1561 - 1569
