Abstract
3C-SiC/Si heterojunction diodes were prepared by reactive magnetron sputtering of pure Si in CH4-Ar discharge on Si(111) substrates kept at temperatures (Ts) ranging from 800 to 1000°C. A good diode rectification process started for films grown at Ts≤900°C. Heterojunction diodes grown at Ts = 850°C showed the best performance with a saturation current density of 2.4 × 10−4 A cm−2. Diode reverse breakdown was obtained at a voltage of −110 V. The doping concentration (Nd) of the 3C-SiC films was calculated from 1/C2 vs V plot to be 3 × 1015 cm−3. Band offset values obtained were −0.27 and 1.35 eV for the conduction and valence band, respectively. X-ray diffraction analysis revealed the film grown at Ts = 850°C to be single-phase 3C-SiC. The full width at half maximum of the 3C-SiC(111) peak was only 0.25 degree. Cross-sectional transmission electron microscopy showed the film to be highly (111)-oriented with an epitaxial columnar structure of double positioning domain boundaries.
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Wahab, Q., Karlsteen, M., Nur, O. et al. Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown. J. Electron. Mater. 25, 1495–1500 (1996). https://doi.org/10.1007/BF02655389
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DOI: https://doi.org/10.1007/BF02655389