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Efficient 2.0–2.6 μm wavelength photoluminescence from narrow bandgap InAsP/InGaAs double heterostructures grown on InP substrates

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Abstract

Photoluminescence spectra and efficiency have been measured for several strained InAsyP1−yInxGa1−xAs (0.28 < y ≤ 0.62; 0.66 ≤ x ≤ 0.83) double heterostructures grown by vapor phase epitaxy on InP substrates with graded InAsP buffer layers. Luminescence peak positions between the wavelengths of 1.99 and 2.57 (μm at a temperature of 295K are consistent with bandgap luminescence from the InxGa1−xAs active regions. Despite a high density of dislocations in the buffer layers, internal radiative recombination efficiencies of from 25 to 50% for the structures are found at 295K.

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Authors and Affiliations

  1. Advanced Technology Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering and the Princeton Materials Institute, Princeton University, 08544, Princeton, NJ

    D. Garbuzov, D. -S. Kim, S. R. Forrest, R. Menna, M. Lange, G. H. Olsen & M. Cohen

  2. David Sarnoff Research Center, 08543, Princeton, NJ

    R. Menna

  3. Sensors Unlimited, 08540, Princeton, NJ

    M. Lange, G. H. Olsen & M. Cohen

Authors
  1. D. Garbuzov
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  2. D. -S. Kim
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  3. S. R. Forrest
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  4. R. Menna
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  5. M. Lange
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  6. G. H. Olsen
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  7. M. Cohen
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Garbuzov, D., Kim, D.S., Forrest, S.R. et al. Efficient 2.0–2.6 μm wavelength photoluminescence from narrow bandgap InAsP/InGaAs double heterostructures grown on InP substrates. J. Electron. Mater. 25, 1501–1505 (1996). https://doi.org/10.1007/BF02655390

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  • DOI: https://doi.org/10.1007/BF02655390

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