Electrical transport characterizations of nitrogen doped ZnSe and ZnTe films Y. FanJ. HanA. V. Nurmikko OriginalPaper 04 February 2013 Pages: 245 - 249
Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films K. A. BowersZ. YuJ. F. Schetzina OriginalPaper 04 February 2013 Pages: 251 - 254
Electrical transport in n-type ZnMgSSe grown by molecular beam epitaxy on GaAs T. MarshallJ. A. PetruzzelloC. A. Ponzoni OriginalPaper 04 February 2013 Pages: 255 - 258
Nitrogen doping of ZnSe by OMVPE using a novel organometallic precursor Salman AkramIshwara B. BhatAndreas A. Melas OriginalPaper 04 February 2013 Pages: 259 - 262
Nitrogen doping in ZnSe by photo-assisted metalorgani vapor phase epitaxy Shizuo FujitaTakeharu AsanoShigeo Fujita OriginalPaper 04 February 2013 Pages: 263 - 268
Gas source molecular beam epitaxy of ZnSe and ZnSe:N C. A. CoronadoE. HoL. A. Kolodziejski OriginalPaper 04 February 2013 Pages: 269 - 273
Dislocation nucleation mechanism and doping effect in p-type ZnSe/GaAs L. H. KuoL. Salamanca-RibaJ. Qiu OriginalPaper 04 February 2013 Pages: 275 - 281
CdZnSe/ZnSe strained layer superlattices disordered by germanium diffusion T. YokogawaP. D. FloydJ. K. Furdyna OriginalPaper 04 February 2013 Pages: 283 - 287
Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization CM.Sotomayor TorresA. P. SmartC. D. W. Wilkinson OriginalPaper 04 February 2013 Pages: 289 - 298
Temperature and flow modulation doping of manganese in ZnS electroluminescent films by low pressure metalorganic chemical vapor deposition J. E. YuK. S. JonesC. N. King OriginalPaper 04 February 2013 Pages: 299 - 305
Multi-Mode behavior of optical phonons in II-VI ternary and quaternary alloys Eunsoon OhA. K. Ramdas OriginalPaper 04 February 2013 Pages: 307 - 312
Stimulated emission and optical gain in CdTe/CdMnTe graded index separate confinement heterostructures R. LegrasLe Si DangE. Molva OriginalPaper 04 February 2013 Pages: 313 - 317
Structural characteristics of as-deposited and crystallized mixed-phase silicon films Apostolos T. VoutsasMiltiadis K. Hatalis OriginalPaper 04 February 2013 Pages: 319 - 330
Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy Yoshitaka OkadaShigeru OhtaMitsuo Kawabe OriginalPaper 04 February 2013 Pages: 331 - 335
An evaluation of contamination from plasma immersion ion implantation on silicon device characteristics Shu QinChung Chan OriginalPaper 04 February 2013 Pages: 337 - 340
Energy dependence and depth distribution of electron beam-induced damage in GaAs/AIGaAs heterostructures Nobuyuki TanakaTomonori Ishikawa OriginalPaper 04 February 2013 Pages: 341 - 346
Gas phase synthesis and processing of silicon nanocrystallites: Characterization by photoluminescence emission spectroscopy L.A. ChiuA.A. SeraphinK.D. Kolenbrander OriginalPaper 18 February 2013 Pages: 347 - 354
Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy Makoto KondoNaoko OkadaToshiyuki Tanahashi OriginalPaper 18 February 2013 Pages: 355 - 358
Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/lnAIP multiple quantum wells and InGaP bulk M. PrasadO.E. MartinezG.Y. Robinson OriginalPaper 18 February 2013 Pages: 359 - 362