Abstract
Nitrogen doped ZnSe/GaAs heterostructures grown at 150 and 250°C were studied by transmission électron microscopy (TEM). The density of threading dislocations and the interfacial dislocation structure in ZnSe/GaAs heterostructures are related to the N-doping concentration. In addition, in-situ TEM heating studies show that Frank partial dislocations formed below critical thickness in N-doped ZnSe/GaAs are the sources for nucleation of a regular array of misfit dislocations at the ZnSe/GaAs interface. By the dissociation of the Frank partial dislocations and interaction reactions between the dislocations, the 60° misfit dislocations form. The Frank partial dislocations bound stacking faults which usually form in pairs at the film/substrate interface. The density of stacking faults increases with increasing N-doping concentration. Thus, at high N-doping levels, the dislocation nucleation sources are close together and not all of the Frank partial dislocations dissociate, so that a high density of threading dislocations results in samples with high N-doping concentrations. The high density of threading dislocations in the ZnSe film are found to be associated with a reduction or saturation of the net carrier density.
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R.M. Park, M.B. Troffer, CM. Rouleau, J.M. DePuydt and M.A. Haase,Appl. Phys. Lett. 57, 2127 (1990).
M. A. Haase, J. Qiu, J.M. DePuydt and H. Cheng,Appl. Phys. Lett. 59, 1272 (1991).
H. Jeon, J. Ding, W. Patterson, A.V. Nurmikko, W. Xié, D.C. Grillo, M. Kobayashi and R.L. Gunshor,Appl. Phys. Lett. 59, 3619 (1991).
J. Qiu, J.M. DePuydt, H. Cheng and M.A. Haase,Appl. Phys. Lett. 59, 2992 (1991).
L.H. Kuo, L. Salamanca-Riba,J.M. DePuydt, H. Cheng and J. Qiu,Appl. Phys. Lett. 63, 3197 (1993).
D.J. Eaglesham, E.P. Kvam,D.M. Maher, C.J. Humphreys and J.C. Bean,Phil. Mag. A 59, 1059 (1989).
S. Guha, H. Munekata, F.K. LeGoues and L.L. Cheng,Appl. Phys. Lett. 60, 3220 (1992).
L. H. Kuo, L. Salamanca-Riba, J.M. DePuydt, H. Cheng and J. Qiu,Phil. Mag. A (in press).
J. Petruzzello,J. Gaines, P. Van Der Sluis, D. Olego, T. Marshall and C. Ponzoni,J. Electron. Mater. 22, 453 (1993).
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Kuo, L.H., Salamanca-Riba, L., Depuydt, J.M. et al. Dislocation nucleation mechanism and doping effect in p-type ZnSe/GaAs. J. Electron. Mater. 23, 275–281 (1994). https://doi.org/10.1007/BF02670636
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DOI: https://doi.org/10.1007/BF02670636