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Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films

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Abstract

Values for the acceptor ionization energy, Ea, and compensating donor ionization energy, Ed, have been obtained from an analysis of variable-temperature photoluminescence data taken for a series of highly conducting nitrogen-plasma doped ZnSe thin films. Eawas found to be highly temperature dependent, with values ranging from Ea ~110 meV at low temperatures to ~60 meV at room temperature. The compensating donor ionization energy ranged from Ed ~31 meV at low temperatures to ~24 meVat room temperature. These results provide clear evidence of thenonhydrogenic nature of the nitrogen acceptor state in heavily doped ZnSe:N thin films and suggest that interstitial bonding of N, at two or more stable sites, may play a central role in the p-type doping and compensation of this material at high doping levels.

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Authors and Affiliations

  1. Department of Physics, North Carolina State University, 27695-8202, Raleigh, NC

    K. A. Bowers, Z. Yu, K. J. Gossett, J. W. Cook & J. F. Schetzina

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  1. K. A. Bowers
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  2. Z. Yu
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  3. K. J. Gossett
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  4. J. W. Cook
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  5. J. F. Schetzina
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Bowers, K.A., Yu, Z., Gossett, K.J. et al. Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films. J. Electron. Mater. 23, 251–254 (1994). https://doi.org/10.1007/BF02670631

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