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Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy

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Abstract

Preliminary experimental results and analysis of photoluminescence (PL) measurements performed on GaAs heteroepitaxial films, which have been grown on Si(100) substrates by atomic hydrogen-assisted low-temperature molecular beam epitaxy technique have been presented and discussed. The results have also been compared with those obtained for GaAs homoepitaxial films. Furthermore, minority carrier lifetimes in n-GaAs on Si have been characterized by the PL decay method and an average lifetime of as high as 8.0 ns has been successfully obtained, which is the highest value ever reported to date.

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References

  1. S.F. Fang, A. Keizo, H. Morkoç, C.C. Choi and N. Otsuka, J. Appl. Phys. 68, R31 (1990), and references therein.

    Article  CAS  Google Scholar 

  2. M. Akiyama, Y. Kawarada and K Kaminishi, Jpn. J. Appl. Phys. 23, L843 (1984).

    Article  CAS  Google Scholar 

  3. H. Okamoto, Y. Watanabe, Y. Kadota and Y. Ohmachi, Jpn. J. Appl. Phys. 26, L1950 (1987).

    Article  CAS  Google Scholar 

  4. C. Choi, N. Otsuka, G. Munns, R. Houdre, H. Morkoç, S. L. Zhang, D. Levi and M. V. Klein, Appl. Phys. Lett. 50, 992 (1987).

    Article  CAS  Google Scholar 

  5. M. Yamaguchi, M. Tachikawa, Y. Itoh, M. Sugo and S. Kondo, J. Appl. Phys. 68, 4518 (1988).

    Article  Google Scholar 

  6. R. Fisher, H. Morkoç, D.A. Neumann, H. Zabel, C. Choi, N. Otsuka, M. Longerbone and L.P. Erickson, J. Appl. Phys. 60, 1640 (1986).

    Article  Google Scholar 

  7. M. Yamaguchi, T. Nishioka and M. Sugo, Appl. Phys. Lett. 54, 24 (1989).

    Article  CAS  Google Scholar 

  8. M. Tachikawa and H. Mori, Appl. Phys. Lett. 56, 2225 (1990).

    Article  CAS  Google Scholar 

  9. K. Nozawa and Y. Horikoshi, Jpn. J. Appl. Phys. 30, L668 (1991).

    Article  CAS  Google Scholar 

  10. K. Nozawa and Y. Horikoshi, J. Electron. Mater. 21, 641 (1992).

    Article  CAS  Google Scholar 

  11. Y. Okada, H. Shimomura, T. Sugaya and M. Kawabe, Jpn. J. Appl. Phys. 30, 3774 (1991).

    Article  CAS  Google Scholar 

  12. H. Shimomura, Y. Okada and M. Kawabe, Jpn. J. Appl. Phys. 31, L628 (1992).

    Article  CAS  Google Scholar 

  13. H. Shimomura, Y. Okada, H. Matsumoto, M. Kawabe, Y. Kitami and Y. Bando, Jpn. J. Appl. Phys. 32, 632 (1992).

    Article  Google Scholar 

  14. Y. Okada, H. Shimomura and M. Kawabe, J. Appl. Phys. 73, 7376 (1993).

    Article  CAS  Google Scholar 

  15. W.I. Wang, Appl. Phys. Lett. 44, 1149 (1984).

    Article  CAS  Google Scholar 

  16. S. Zemon, S.K. Shastry, P. Norris, C. Jagannath and G. Lambert, Solid State Commun. 58, 457 (1986).

    Article  CAS  Google Scholar 

  17. Y. Huang, P.Y. Yu, H. Lee and S. Wang, Appl. Phys. Lett. 52, 579 (1988).

    Article  CAS  Google Scholar 

  18. M. Enatsu, M. Shimizu, T. Mizuki, K. Sugawara and T. Sakurai, Jpn. J. Appl. Phys. 26, L1468 (1987).

    Article  CAS  Google Scholar 

  19. W. Stolz, F.E.G. Guimaraes and K. Ploog,J. Appl. Phys. 63, 492 (1988).

    Article  CAS  Google Scholar 

  20. F.H. Pollak and M. Cardona, Phys. Rev. 172, 816 (1968).

    Article  CAS  Google Scholar 

  21. A. Gavini and M. Cardona, Phys. Rev. B1, 672 (1970).

    Google Scholar 

  22. C.P. Kuo, S.K. Vong, R.M. Cohen and G.B. Stringfellow, J. Appl. Phys. 57, 5428 (1985).

    Article  CAS  Google Scholar 

  23. M. Yamaguchi, J. Mater. Res. 6, 376 (1991).

    Article  CAS  Google Scholar 

  24. S.F. Fang, A. Salvador and H. Morkoç, Appl. Phys. Lett. 58, 1887 (1987).

    Article  Google Scholar 

  25. A. Bosacchi, S. Franchi, C. Ghezzi, E. Gombia, M. Guzzi, J.L. Staehli, P. Allegri and V. Avanzini, J. Cryst. Growth 81, 181 (1987).

    Article  CAS  Google Scholar 

  26. R. Venkatasubramanian, M.L. Timmons, J.B. Posthill, B.M. Keyes and R.K Ahrenkiel, J. Cryst.Growth 107, 489 (1991).

    Article  CAS  Google Scholar 

  27. H.C. Casey, Jr., B.I. Miller and E. Pinkas, J. Appl. Phys. 44, 1281 (1963).

    Article  Google Scholar 

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Author notes

  1. Hirofumi Shimomura

    Present address: NEC Optoelectronics Research Labs., 34 Miyukigaoka, Tsukuba, 305, Ibaraki, Japan

Authors and Affiliations

  1. Institute of Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305, Ibaraki, Japan

    Yoshitaka Okada, Shigeru Ohta, Akio Kawabata, Hirofumi Shimomura & Mitsuo Kawabe

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  1. Yoshitaka Okada
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  2. Shigeru Ohta
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  3. Akio Kawabata
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  4. Hirofumi Shimomura
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  5. Mitsuo Kawabe
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Okada, Y., Ohta, S., Kawabata, A. et al. Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy. J. Electron. Mater. 23, 331–335 (1994). https://doi.org/10.1007/BF02670643

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