1. Influence of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide

   • Lucy M. Thomas
   • Vishnu K. Lakdawala

   Regular Issue Paper Pages: 341 - 346

2. Effects of nitrogen trifluoride on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like carbon films

   • S. S. Ang
   • G. Sreenivas
   • R. K. Ulrich

   Regular Issue Paper Pages: 347 - 352

3. Meltback etching and regrowth of GaAs/AlGaAs in liquid phase epitaxy for fabrication of microlens

   • Gyu-Seog Cho
   • Sung-Ho Hahm
   • Young-Se Kwon

   Regular Issue Paper Pages: 353 - 359

4. Simultaneous impurity doping with Zn and Se in AlGaInP by MOVPE

   • C. Anayama
   • H. Sekiguchi
   • T. Tanahashi

   Regular Issue Paper Pages: 361 - 364

5. Passivation of Hg_1−xCd_xTe by photochemical native oxidation: Growth characteristics

   • G. H. Winton
   • K. Prasad
   • M. A. C. Hotchkis

   Regular Issue Paper Pages: 365 - 373

6. Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers

   • S. Agarwala
   • M. Tong
   • I. Adesida

   Regular Issue Paper Pages: 375 - 381

7. Role of a nucleation layer in suppressing interfacial pitting in

   • A. K. Ballal
   • L. Salamanca-Riba
   • B. K. Fuller

   Regular Issue Paper Pages: 383 - 389

8. Electrical characterization of semiconducting diamond thin films and single crystals

   • J. A. Von Windheim
   • V. Venkatesan
   • K. Das

   Regular Issue Paper Pages: 391 - 398

9. Photoluminescence characterization of UHV/CVD grown multi-quantum well structures

   • R. Misra
   • D. W. Greve
   • T. E. Schlesinger

   Regular Issue Paper Pages: 399 - 402

10. Trapping and recombination processes via deep level T₃ in semi-insulating gallium arsenide

    • U. V. Desnica
    • B. Šantić
    • M. Pavlović

    Regular Issue Paper Pages: 403 - 407

11. Solid boron and antimony doping of Si and SiGe grown by gas source molecular beam epitaxy

    • S. H. Li
    • P. K. Bhattacharya
    • E. Gulari

    Regular Issue Paper Pages: 409 - 412

12. Yellow electroluminescent diodes utilizing poly(2,5-bis(cholestanoxy)-1,4-phenylene vinylene)

    • C. Zhang
    • S. Höger
    • A. J. Heeger

    Regular Issue Paper Pages: 413 - 417

13. Transformation process of laser ablated PZT thin films

    • Hongxue Zhang
    • Hannu Moilanen
    • Risto Rautioaho

    Regular Issue Paper Pages: 419 - 422

14. Interface strain in organometallic vapor phase epitaxy grown InGaAs/InP superlattices

    • A. R. Clawson
    • X. Jiang
    • P. K. L. Yu

    Erratum Pages: 423 - 428