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Influence of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide

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Abstract

The effect of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide has been studied using photoinduced current transient spectroscopy. From the findings, models for the copper-related complexes in GaAs are identified. Capping effect of deposited copper layer is investigated. Deep levels with activation energies of 0.14 eV, 0.32 eV, and 0.45 eVhave been identified, which are attributed to CuGa, SiGa CuGa complex, and VAsCuGaVAs complex, respectively.

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Authors and Affiliations

  1. Department of Electrical & Computer Engineering, Old Dominion University, 23529, Norfolk, VA

    Lucy M. Thomas & Vishnu K. Lakdawala

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  1. Lucy M. Thomas
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  2. Vishnu K. Lakdawala
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Thomas, L.M., Lakdawala, V.K. Influence of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide. J. Electron. Mater. 22, 341–346 (1993). https://doi.org/10.1007/BF02661660

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  • DOI: https://doi.org/10.1007/BF02661660

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