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Simultaneous impurity doping with Zn and Se in AlGaInP by MOVPE

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Abstract

We studied the simultaneous doping with zinc and selenium in AlGaInP by metalorganic vapor phase epitaxy. We measured the dependence of zinc and selenium incorporation on substrate orientation from (100) to (311)A faces, showing that the simultaneously doped layer becomes n-type on the (100) face and p-type on the (311)A face. The simultaneously doped layer was examined by photoluminescence, capacitance-voltage, Hall, and secondary ion mass spectrometry analysis. We showed that the simultaneously doped layers have good electrical conduction characteristics and optical qualities for cladding layers in optical devices. We also demonstrated a lateral p-n junction on a patterned substrate.

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Authors and Affiliations

  1. Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, 243-01, Atsugi, Japan

    C. Anayama, H. Sekiguchi, M. Kondo, K. Domen & T. Tanahashi

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  1. C. Anayama
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  2. H. Sekiguchi
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  3. M. Kondo
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  4. K. Domen
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  5. T. Tanahashi
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Anayama, C., Sekiguchi, H., Kondo, M. et al. Simultaneous impurity doping with Zn and Se in AlGaInP by MOVPE. J. Electron. Mater. 22, 361–364 (1993). https://doi.org/10.1007/BF02661663

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  • DOI: https://doi.org/10.1007/BF02661663

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