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Transformation process of laser ablated PZT thin films

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Abstract

Transformation behavior of piezoelectric lead zirconate titanate (PZT) thin films prepared by laser ablation on unheated Al2O3 substrates was investigated within a broad temperature region. As-deposited films were mainly amorphous containing some microcrystalline perovskite and pyrochlore phases. The rhombohedral perovskite was the main phase in the films annealed between 500 and 800°C. These films also contained some pyrochIore, PbTiO3, PbO, and ZrO2. The PbO and ZrO2 disappeared in the optimal annealing temperature interval of 700 to 800°C. Decomposition reactions took place above 800°C due to evaporation of lead and diffusion reactions occurred between substrate and film so that the films annealed at 1100°C consisted of ZrO2, TiO2, and PbO.

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Author notes

  1. Hongxue Zhang & Risto Rautioaho

    Present address: Material Engineering Laboratory, University of Oulu, SF-90570, Oulu, Finland

Authors and Affiliations

  1. Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570, Oulu, Finland

    Hongxue Zhang, Hannu Moilanen, Antti Uusimäki, Seppo Leppävuori & Risto Rautioaho

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  1. Hongxue Zhang
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  2. Hannu Moilanen
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  3. Antti Uusimäki
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  4. Seppo Leppävuori
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  5. Risto Rautioaho
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Zhang, H., Moilanen, H., Uusimäki, A. et al. Transformation process of laser ablated PZT thin films. J. Electron. Mater. 22, 419–422 (1993). https://doi.org/10.1007/BF02661672

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  • DOI: https://doi.org/10.1007/BF02661672

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