Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes J. F. ChenA. Y. Cho Regular Issue Paper Pages: 259 - 265
ZnO films deposited on GaAs substrates with a SiO2 thin buffer layer Hong Koo KimMichelle Mathur Regular Issue Paper Pages: 267 - 273
Ohmic contacts to p-CuInSe2 crystals Ellen MoonsTina EngelhardDavid Cahen Regular Issue Paper Pages: 275 - 280
Photon assisted growth of HgTe by metalorganic chemical vapor deposition A. RuzinY. Nemirovsky Regular Issue Paper Pages: 281 - 288
Interface profile optimization in novel surface passivation scheme for InGaAs nanostructures using Si interface control layer Satoshi KodamaMasamichi AkazawaHideki Hasegawa Regular Issue Paper Pages: 289 - 295
T(z) diagram and optical energy gap values of Cd1−zMnzGa2Se4 alloys E. GuerreroM. QuinteroP. Conflant Regular Issue Paper Pages: 297 - 301
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition D. A. GrützmacherT. O. SedgwickJ. Cotte Regular Issue Paper Pages: 303 - 308
Processing and reconstruction effects on Al-GaAs(100) barrier heights I. M. VitomirovA. RaisanenJ. M. Woodall Regular Issue Paper Pages: 309 - 313
Strained quantum well modulation-doped ingasb/algasb structures grown by molecular beam epitaxy J. F. KlemJ. A. LottS. Y. Lin Regular Issue Paper Pages: 315 - 318
Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex J. M. McGregorT. MankuD. C. Houghton Regular Issue Paper Pages: 319 - 321
The effect of boron, oxygen, and fluorine in ion implanted GaAs L. HeW. A. Anderson Regular Issue Paper Pages: 323 - 329
Tilted superlattice composition profile determined by photoluminescence and thermal disordering F. G. JohnsonB. L. OlmstedG. W. Wicks Regular Issue Paper Pages: 331 - 334
Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics Xiaoli XuRichard T. KuehnDennis M. Maher Regular Issue Paper Pages: 335 - 339