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Strained quantum well modulation-doped ingasb/algasb structures grown by molecular beam epitaxy

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Abstract

Strained single quantum well InGaSb/AlGaSb structures for field-effect transistor applications have been grown by molecular beam epitaxy. Modulation-doped p-type structures have been characterized by a variety of techniques, including Hall effect, Shubnikov-de Haas measurements, and cyclotron resonance. These structures exhibit improved hole transport in comparison to similar GaSb/ AlGaSb structures as a result of strain-splitting of the valence band. P-channel field-effect transistors fabricated in this system exhibited a maximum transconductance of 51 and 161 mS/mm at 300 and 77K, respectively, for a 1.2 μm gate-length device.

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Authors and Affiliations

  1. Sandia National Laboratories, P.O. Box 5800, 87185, Albuquerque, NM

    J. F. Klem, J. A. Lott, J. E. Schirber & S. R. Kurtz

  2. Princeton University, 08544, Princeton, NJ

    S. Y. Lin

Authors
  1. J. F. Klem
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  2. J. A. Lott
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  3. J. E. Schirber
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  4. S. R. Kurtz
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  5. S. Y. Lin
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Klem, J.F., Lott, J.A., Schirber, J.E. et al. Strained quantum well modulation-doped ingasb/algasb structures grown by molecular beam epitaxy. J. Electron. Mater. 22, 315–318 (1993). https://doi.org/10.1007/BF02661383

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