Abstract
Effects of boron, fluorine, and oxygen in GaAs have been investigated by electrical characterization using current-voltage, capacitance-voltage and deep level transient spectroscopy techniques. Ion implantation at 100 keV energy was conducted with doses of 1011 and 1012/cm2. Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation condition and ion species. More free carriers were compensated for higher dose and heavier species; however, severe surface damage would also be induced that degrade electrical performance. Rapid thermal annealing treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified. A native shallow defect E4 was easily removed by ion implantation. In higher dose and heavier ion implantation, both electron and hole traps were induced. However, in some cases, heavier ion implantation also removed native defects. Acceptor-type surface states were created by implantation that degrade material electrical characteristics and also reduce the effect of compensation. The damage induced traps were mostly point-defects or point-defect/impurity complexes as evidenced by sensitivity to heat treatment.
Similar content being viewed by others
References
S.J. Pearton,Material Science Reports 4, 313 (1990).
G.D. Henshall, G.H. Thompson, J.E. Whiteaway, P.R. Selway and M. Broomfield,IEEE Trans. Solid State Electron Devices 3, 1 (1979).
J.C. Dyment, J.C. North and L.A. D’Asaro,J. Appl. Phys. 44, 207 (1973).
G.M. Martin, P. Secordel and C. Venger,J. Appl. Phys. 53, 8706 (1982).
T. Asano, R.D. Atanassov, H. Ishiwara and S. Furukawa,Jpn. J. Appl. Phys. 20, 901 (1981).
Y. Hirayama, Y. Suzuki and H. Okamoto,Jpn. J. Appl. Phys. 24, 1498 (1985).
S. J. Pearton, F. Ren, P. W. Wisk, T. R. Fullman, R. F. Kopf, J. M. Kuo, W. S. Hobson and C. R. Abernathy,J. Appl. Phys. 69, 698 (1991).
R. N. Thomas, H. M. Hobgood, D. L. Barrett and G. Eldridge,Proc. Conf. on Semi-insulating III-V Materials (Shiva, Nottingham, 1980).
A. E. Von Neida, S.J. Pearton, W.S. Hobson and C.R. Abernathy,Appl. Phys. Lett. 54, 1540 (1989).
L. He and W.A. Anderson,Solid State Electron., in press.
G. M. Martin, A. Mitonneau and A. Mircea,Electron. Lett. 13, 191 (1977).
S. Dhar, P.K. Bhattacharya, F.Y. Juang, W.P. Hong and R.A. Sadler,IEEE Trans, on Electron Devices ED-33, 111 (1986).
H. Hasegawa and A. Majerfeld,Electron. Lett. 11, 286 (1975).
L. He and W.A. Anderson,Mat. Res. Soc. Symp. Proc. 240, 847 (1992).
K. Yamasaki, M. Yoshida and T. Sugano,Jpn. J. Appl. Phys. 18, 113 (1979).
S. M. Sze,Physics of Semiconductor Devices, 2nd Ed., John Wiley & Sons, New York, 1985.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
He, L., Anderson, W.A. The effect of boron, oxygen, and fluorine in ion implanted GaAs. J. Electron. Mater. 22, 323–329 (1993). https://doi.org/10.1007/BF02661385
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02661385