Abstract
Photon assisted metalorganic chemical vapor deposition (MOCVD) of HgTe by the reaction of mercury and diethyltelluride (DETe) on CdTe substrates is reported. The growths were done at 380–450°C and subatmospheric pressure, with helium as the carrier gas. A simple kinetic model for the MOCVD growth is presented. The model yields the growth rate as a function of the gas-phase partial pressures of the constituents in various limiting cases, and is corroborated by experimental results. The apparent activation energy for growth without photons (33–49 kcal/mol) exceeds the activation energy of pyrolysis of DETe (∼25 kcal/mol) and is significantly reduced in photon assisted growth (18–28 kcal/mol). The effect of photon assisted growth on morphology, thickness uniformity, and location along the susceptor is also presented and discussed.
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Ruzin, A., Nemirovsky, Y. Photon assisted growth of HgTe by metalorganic chemical vapor deposition. J. Electron. Mater. 22, 281–288 (1993). https://doi.org/10.1007/BF02661378
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DOI: https://doi.org/10.1007/BF02661378