1. Foreword

   • David C. Look
   • Michael R. Melloch

   EditorialNotes Pages: 1373 - 1373

2. A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

   • G. N. Maracas
   • K. Shiralagi
   • R. W. Carpenter

   Special Issue Paper Pages: 1375 - 1381

3. A scanning tunneling microscopy study of low-temperature grown GaAs

   • K. Pond
   • J. Ibbetson
   • P. M. Petroff

   Special Issue Paper Pages: 1383 - 1386

4. Observation of low-T GaAs growth regimes by real-time ellipsometry

   • K. G. Eyink
   • Y. S. Cong
   • B. G. Streetman

   Special Issue Paper Pages: 1387 - 1390

5. Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase

   • A. Giordana
   • O. J. Glembocki
   • S. Tadayon

   Special Issue Paper Pages: 1391 - 1393

6. Anomalies in annealed LT-GaAs samples

   • Z. Liliental-Weber
   • K. M. Yu
   • D. C. Look

   Special Issue Paper Pages: 1395 - 1399

7. Annealing of As_Ga-related defects in LT-GaAs: The role of gallium vacancies

   • D. E. Bliss
   • W. Walukiewicz
   • E. E. Haller

   Special Issue Paper Pages: 1401 - 1404

8. Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs

   • M. T. Umlor
   • D. J. Keeble
   • K. G. Lynn

   Special Issue Paper Pages: 1405 - 1408

9. Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

   • Fereydoon Namavar
   • N. M. Kalkhoran
   • V. Haven

   Special Issue Paper Pages: 1409 - 1412

10. Precipitation of arsenic in doped GaAs

    • C. L. Chang
    • K. Mahalingam
    • J. M. Woodall

    Special Issue Paper Pages: 1413 - 1416

11. Electrical characteristics of low temperature-Al_0.3Ga_0.7As

    • Ashish K. Verma
    • Jay Tu
    • Eicke R. Weber

    Special Issue Paper Pages: 1417 - 1420

12. The role of microstructure in the electrical properties of GaAs grown at low temperature

    • J. P. Ibbetson
    • J. S. Speck
    • U. K. Mishra

    Special Issue Paper Pages: 1421 - 1424

13. Electrical properties of molecular beam epitaxial GaAs grown at 300–450°C

    • D. C. Look
    • G. D. Robinson
    • C. E. Stutz

    Special Issue Paper Pages: 1425 - 1428

14. Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures

    • Z. -Q. Fang
    • D. C. Look

    Special Issue Paper Pages: 1429 - 1432

15. Electrical properties of low-temperature GaAs grown by molecular beam epitaxy and migration enhanced epitaxy

    • Kai Zhang
    • D. L. Miller

    Special Issue Paper Pages: 1433 - 1436

16. Diode structures from amorphous low-temperature GaAs

    • C. S. Kyono
    • B. Tadayon
    • S. Tadayon

    Special Issue Paper Pages: 1437 - 1440

17. Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

    • P. W. Yu
    • C. E. Stutz

    Special Issue Paper Pages: 1441 - 1444

18. Infrared studies of be-doped GaAs grown by molecular beam epitaxy at low temperatures

    • D. N. Talwar
    • M. O. Manasreh
    • K. R. Evans

    Special Issue Paper Pages: 1445 - 1448

19. High-speed photodetector applications of GaAs and In_xGa_1−xAs/GaAs grown by low-temperature molecular beam epitaxy

    • S. Gupta
    • J. F. Whitaker
    • J. M. Ballingall

    Special Issue Paper Pages: 1449 - 1455

20. Influence of growth temperatures on the photoresponse of low temperature grown GaAs:As p-i-n diodes

    • A. Srinivasan
    • K. Sadra
    • B. G. Streetman

    Special Issue Paper Pages: 1457 - 1459

21. Subpicosecond carrier response of unannealed low-temperature-grown GaAs vs temperature

    • H. H. Wang
    • J. F. Whitaker
    • J. M. Ballingall

    Special Issue Paper Pages: 1461 - 1464

22. Structure and carrier lifetime in LT-GaAs

    • Zuzanna Liliental-Weber
    • H. J. Cheng
    • F. W. Smith

    Special Issue Paper Pages: 1465 - 1469

23. In_xGa_1−xAs (x=0.25–0.35) grown at low temperature

    • J. M. Ballingall
    • P. Ho
    • J. Whitaker

    Special Issue Paper Pages: 1471 - 1475

24. Femtosecond optical response of low temperature grown In_0.53Ga_0.47As

    • B. C. Tousley
    • S. M. Mehta
    • P. Cooke

    Special Issue Paper Pages: 1477 - 1480

25. High resistivity LT-In_0.47Ga_0.53P grown by gas source molecular beam epitaxy

    • Y. He
    • J. Ramdani
    • S. M. Bedair

    Special Issue Paper Pages: 1481 - 1485

26. Electronic properties of low-temperature InP

    • P. Dreszer
    • W. M. Chen
    • E. R. Weber

    Special Issue Paper Pages: 1487 - 1490

27. Optically detected magnetic resonance studies of low-temperature InP

    • W. M. Chen
    • P. Dreszer
    • C. W. Tu

    Special Issue Paper Pages: 1491 - 1494

28. Ordering in InGaAs/InAlAs layers

    • N. D. Zakharov
    • Z. Liliental-Weber
    • R. Metzger

    Special Issue Paper Pages: 1495 - 1498

29. First direct observation of EL2-like defect levels in annealed LT-GaAS

    • N. D. Jäger
    • A. K. Verma
    • E. R. Weber

    Special Issue Paper Pages: 1499 - 1502

30. Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation

    • L. -W. Yin
    • N. X. Nguyen
    • U. K. Mishra

    Special Issue Paper Pages: 1503 - 1505

31. Low-frequency noise and phase noise in MESFETS with LTG-GaAs passivation

    • Yayun Lin
    • Arthur D. van Rheenen
    • Frank W. Smith

    Special Issue Paper Pages: 1507 - 1509

32. Application of low temperature GaAs to GaAs/Si

    • Hiroshi Fujioka
    • Hyunchul Sohn
    • Ashish Verma

    Special Issue Paper Pages: 1511 - 1514