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Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

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Abstract

We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high resistivity (surface or buried) GaAs layers can be produced by this method. The arsenic-implanted materials are similar to GaAs:As buffer layers grown by low-temperature molecular beam epitaxy, which are used for eliminating backgating problems in GaAs circuits. Arsenic implantation is a nonepitaxial process which is compatible with current GaAs technology. Formation of insulating GaAs layers by this technique may improve the performance and packing density of GaAs integrated circuits, leading to advanced novel III–V compound-based technologies for high-speed and radiation-hard circuits.

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Authors and Affiliations

  1. Spire Corporation, 01730, Bedford, MA

    Fereydoon Namavar, N. M. Kalkhoran, P. A. Sekula-Moisé, S. Vernon & V. Haven

  2. CEMES/CNRS, Toulouse, France

    A. Claverie

  3. Lawrence Berkeley Laboratory, 94720, Berkeley, CA

    Z. Liliental-Weber

  4. University of California at Berkeley, 94720, CA

    E. R. Weber

Authors
  1. Fereydoon Namavar
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  2. N. M. Kalkhoran
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  3. A. Claverie
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  4. Z. Liliental-Weber
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  5. E. R. Weber
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  6. P. A. Sekula-Moisé
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  7. S. Vernon
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  8. V. Haven
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Namavar, F., Kalkhoran, N.M., Claverie, A. et al. Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers. J. Electron. Mater. 22, 1409–1412 (1993). https://doi.org/10.1007/BF02649987

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  • DOI: https://doi.org/10.1007/BF02649987

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