Abstract
The effect of annealing on the electrical properties of a GaAs diode structure, which incorporated a nominally undoped low-temperature (LT) layer on top of conventionally grown p-type GaAs, is examined. Unannealed GaAs grown by molecular beam epitaxy at substrate temperatures below 250°C is amorphous and highly resistive. Annealing at high temperatures converts the undoped LT-GaAs from amorphous to single crystal material. The annealed material is n-type. The current-voltage characteristics of the LT on p-type GaAs structures showed greater asymmetry, with lower reverse leakage currents, as the anneal temperature was increased above 400°C. This reflects the improved crystal quality of the LT layer.
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Kyono, C.S., Tadayon, B., Twigg, M.E. et al. Diode structures from amorphous low-temperature GaAs. J. Electron. Mater. 22, 1437–1440 (1993). https://doi.org/10.1007/BF02649994
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DOI: https://doi.org/10.1007/BF02649994