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Ordering in InGaAs/InAlAs layers

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Abstract

The structure of InCaAs/InAlAs layers lattice matched to an InP substrate, grown on either (100) or on (110) with a 4° tilt toward [111] at 500 and 300°C has been investigated by transmission electron microscopy. High perfection resulted for the layers grown on [001] oriented substrates whereas growth on the near [110] substrates resulted in compositional nonuniformities, macrosteps formation, and ordering of the group III elements. This difference in structural perfection between the two sets of samples was also reflected in differences in electrical properties.

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Authors and Affiliations

  1. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 62/203, University of California, 94720, Berkeley, CA

    N. D. Zakharov, Z. Liliental-Weber, W. Swider & J. Washburn

  2. Hughes Research Labs, 3011 Malibu Canyon Rd., 90265, Malibu, CA

    A. S. Brown & R. Metzger

Authors
  1. N. D. Zakharov
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  2. Z. Liliental-Weber
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  3. W. Swider
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  4. J. Washburn
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  5. A. S. Brown
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  6. R. Metzger
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Zakharov, N.D., Liliental-Weber, Z., Swider, W. et al. Ordering in InGaAs/InAlAs layers. J. Electron. Mater. 22, 1495–1498 (1993). https://doi.org/10.1007/BF02650006

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  • DOI: https://doi.org/10.1007/BF02650006

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