A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE G. N. MaracasK. ShiralagiR. W. Carpenter Special Issue Paper Pages: 1375 - 1381
A scanning tunneling microscopy study of low-temperature grown GaAs K. PondJ. IbbetsonP. M. Petroff Special Issue Paper Pages: 1383 - 1386
Observation of low-T GaAs growth regimes by real-time ellipsometry K. G. EyinkY. S. CongB. G. Streetman Special Issue Paper Pages: 1387 - 1390
Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase A. GiordanaO. J. GlembockiS. Tadayon Special Issue Paper Pages: 1391 - 1393
Anomalies in annealed LT-GaAs samples Z. Liliental-WeberK. M. YuD. C. Look Special Issue Paper Pages: 1395 - 1399
Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies D. E. BlissW. WalukiewiczE. E. Haller Special Issue Paper Pages: 1401 - 1404
Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs M. T. UmlorD. J. KeebleK. G. Lynn Special Issue Paper Pages: 1405 - 1408
Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers Fereydoon NamavarN. M. KalkhoranV. Haven Special Issue Paper Pages: 1409 - 1412
Precipitation of arsenic in doped GaAs C. L. ChangK. MahalingamJ. M. Woodall Special Issue Paper Pages: 1413 - 1416
Electrical characteristics of low temperature-Al0.3Ga0.7As Ashish K. VermaJay TuEicke R. Weber Special Issue Paper Pages: 1417 - 1420
The role of microstructure in the electrical properties of GaAs grown at low temperature J. P. IbbetsonJ. S. SpeckU. K. Mishra Special Issue Paper Pages: 1421 - 1424
Electrical properties of molecular beam epitaxial GaAs grown at 300–450°C D. C. LookG. D. RobinsonC. E. Stutz Special Issue Paper Pages: 1425 - 1428
Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures Z. -Q. FangD. C. Look Special Issue Paper Pages: 1429 - 1432
Electrical properties of low-temperature GaAs grown by molecular beam epitaxy and migration enhanced epitaxy Kai ZhangD. L. Miller Special Issue Paper Pages: 1433 - 1436
Diode structures from amorphous low-temperature GaAs C. S. KyonoB. TadayonS. Tadayon Special Issue Paper Pages: 1437 - 1440
Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures P. W. YuC. E. Stutz Special Issue Paper Pages: 1441 - 1444
Infrared studies of be-doped GaAs grown by molecular beam epitaxy at low temperatures D. N. TalwarM. O. ManasrehK. R. Evans Special Issue Paper Pages: 1445 - 1448
High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy S. GuptaJ. F. WhitakerJ. M. Ballingall Special Issue Paper Pages: 1449 - 1455
Influence of growth temperatures on the photoresponse of low temperature grown GaAs:As p-i-n diodes A. SrinivasanK. SadraB. G. Streetman Special Issue Paper Pages: 1457 - 1459
Subpicosecond carrier response of unannealed low-temperature-grown GaAs vs temperature H. H. WangJ. F. WhitakerJ. M. Ballingall Special Issue Paper Pages: 1461 - 1464
Structure and carrier lifetime in LT-GaAs Zuzanna Liliental-WeberH. J. ChengF. W. Smith Special Issue Paper Pages: 1465 - 1469
InxGa1−xAs (x=0.25–0.35) grown at low temperature J. M. BallingallP. HoJ. Whitaker Special Issue Paper Pages: 1471 - 1475
Femtosecond optical response of low temperature grown In0.53Ga0.47As B. C. TousleyS. M. MehtaP. Cooke Special Issue Paper Pages: 1477 - 1480
High resistivity LT-In0.47Ga0.53P grown by gas source molecular beam epitaxy Y. HeJ. RamdaniS. M. Bedair Special Issue Paper Pages: 1481 - 1485
Electronic properties of low-temperature InP P. DreszerW. M. ChenE. R. Weber Special Issue Paper Pages: 1487 - 1490
Optically detected magnetic resonance studies of low-temperature InP W. M. ChenP. DreszerC. W. Tu Special Issue Paper Pages: 1491 - 1494
Ordering in InGaAs/InAlAs layers N. D. ZakharovZ. Liliental-WeberR. Metzger Special Issue Paper Pages: 1495 - 1498
First direct observation of EL2-like defect levels in annealed LT-GaAS N. D. JägerA. K. VermaE. R. Weber Special Issue Paper Pages: 1499 - 1502
Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation L. -W. YinN. X. NguyenU. K. Mishra Special Issue Paper Pages: 1503 - 1505
Low-frequency noise and phase noise in MESFETS with LTG-GaAs passivation Yayun LinArthur D. van RheenenFrank W. Smith Special Issue Paper Pages: 1507 - 1509
Application of low temperature GaAs to GaAs/Si Hiroshi FujiokaHyunchul SohnAshish Verma Special Issue Paper Pages: 1511 - 1514