1. Strain relaxation in epitaxial films

   • Krishna Rajan
   • Eugene Fitzgerald
   • William Jesser

   Foreword Pages: 701 - 701

2. The thermal stability of lattice mismatched InGaAs grown on patterned GaAs

   • G. Patrick Watson
   • Dieter G. Ast
   • Balu Pathangey

   OriginalPaper Pages: 703 - 708

3. Effects of mesa area and orientation on defects in strained In_xGa_1−xAs films grown by LPOMCVD

   • J. R. Jones
   • S. H. Jones
   • D. K. Oh

   OriginalPaper Pages: 709 - 717

4. Structural study of epitaxial MN/AG multilayers

   • S. Nahm
   • L. Salamanca-Riba
   • B. T. Jonker

   OriginalPaper Pages: 719 - 722

5. Dislocation arrangements in gaas/ga_1−xln_xas multilayers grown on (001), (111) and (112) substrates

   • T. E. Mitchell
   • O. Unal

   OriginalPaper Pages: 723 - 734

6. Strain relief in compositionally graded Si_1-xGe_x formed by high dose Ion implantation

   • D. C. Paine
   • D. J. Howard
   • N. G. Stoffel

   OriginalPaper Pages: 735 - 746

7. An affine transformation description of epitaxial heterostructures

   • S. Dakshinamurthy
   • K. Rajan

   OriginalPaper Pages: 747 - 752

8. A diffraction study of a heteroepitaxial system-Ag/Si(111)

   • D. C. Mckenna
   • G. C. Wang
   • K. Rajan

   OriginalPaper Pages: 753 - 758

9. Modeling structural and chemical relaxation at the Al/Si epitaxial interface

   • B. J. Bartholomeusz
   • T. -M. Lu
   • K. Rajan

   OriginalPaper Pages: 759 - 765

10. Nucleation of a 60° glide dislocation in two-dimensional or three-dimensional growth of epilayers

    • K. Jagannadham
    • J. Narayan

    OriginalPaper Pages: 767 - 774

11. Laser processing of TiSi₂ and CoSi₂ thin films on silicon (100) substrates

    • P. Tiwari
    • Mary Longo
    • J. Narayan

    OriginalPaper Pages: 775 - 778

12. Dislocation density reduction in GaAs epilayers on Si using strained layer superlattices

    • S. Sharan
    • J. Narayan
    • J. C. C. Fan

    OriginalPaper Pages: 779 - 784

13. Misfit accommodation by steps in cubic materials

    • G. J. Shiflet
    • J. H. Van Der Merwe

    OriginalPaper Pages: 785 - 791

14. Strain relaxation in epitaxial overlayers

    • Jan H. van der Merwe

    OriginalPaper Pages: 793 - 803

15. Metastable and equilibrium defect structure of II–VI/GaAs interfaces

    • A. F. Schwartzman
    • R. Sinclair

    OriginalPaper Pages: 805 - 814

16. Surface stress effects on the thermodynamics of epitaxy

    • R. C. Cammarata
    • K. Sieradzki

    OriginalPaper Pages: 815 - 817

17. Non-destructive evaluation of residual stresses in thin films via x-ray diffraction topography methods

    • J. Tao
    • L. H. Lee
    • J. C. Bilello

    OriginalPaper Pages: 819 - 825

18. Thermal relaxation in strained InGaAs/GaAs heterostructures

    • J. Kui
    • W. A. Jesser

    OriginalPaper Pages: 827 - 831

19. Strain relaxation in Ge_0.09Si_0.91 epitaxial thin films measured by wafer curvature

    • C. A. Volkert
    • E. A. Fitzgerald
    • Y. J. Mii

    OriginalPaper Pages: 833 - 837

20. Epitaxial necking in GaAs grown on pre-pattemed Si substrates

    • E. A. Fitzgerald
    • Naresh Chand

    OriginalPaper Pages: 839 - 853

21. Critical thickness determination of In_xGa_1-xAs/GaAs strained-layer system by transmission electron microscopy

    • J. Zou
    • B. F. Usher
    • R. Glaisher

    OriginalPaper Pages: 855 - 859

22. Misfit accommodation at epitaxial interfaces

    • K. Rajan
    • E. Fitzgerald
    • W. A. Jesser

    OriginalPaper Pages: 861 - 867

23. Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

    • Y. C. Wang
    • R. F. Davis

    OriginalPaper Pages: 869 - 874

24. The formation of low resistance electrical contacts to shallow junction InP devices without compromising emitter integrity

    • Navid S. Fatemi
    • Victor G. Weizer

    OriginalPaper Pages: 875 - 880

25. Design of epitaxial Metal/AiAs/GaAs structures for enhancement of the schottky barrier height

    • T. L. Cheeks
    • T. Sands
    • V. G. Keramidas

    OriginalPaper Pages: 881 - 884

26. Admittance spectroscopy and trapping phenomena of ZnO based varistors

    • Bi-Shiou Chiou
    • Ming-Chih Chung

    OriginalPaper Pages: 885 - 890