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Design of epitaxial Metal/AiAs/GaAs structures for enhancement of the schottky barrier height

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Abstract

Enhancement of the Schottky barrier height was obtained in MBE grown (CoAl or NiAl)/ AlAs/GaAs heterostructures by incorporating ultra thin AlAs layers between the metal and GaAs. By varying the AlAs thickness from 0 to 10 nm the effective barrier height, determined by current-voltage and capacitance-voltage measurements, could be tailored from 0.76 eV to 1.1 eV. Internal photoemission measurements were performed to verify the 1.1 eV barrier height. The temperature dependence of the current-voltage characteristics showed that thermionic emission was the dominant transport mechanism for all thicknesses of AlAs. The results were consistant with transport through the X-band of AlAs.

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Authors and Affiliations

  1. Bellcore, NVC-3X-259 331 Newman Springs Rd., 07701, Red Bank, NJ

    T. L. Cheeks, T. Sands, R. E. Nahory, J. P. Harbison, H. L. Gilchrist & V. G. Keramidas

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  1. T. L. Cheeks
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  2. T. Sands
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  3. R. E. Nahory
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  4. J. P. Harbison
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  5. H. L. Gilchrist
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  6. V. G. Keramidas
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Cheeks, T.L., Sands, T., Nahory, R.E. et al. Design of epitaxial Metal/AiAs/GaAs structures for enhancement of the schottky barrier height. J. Electron. Mater. 20, 881–884 (1991). https://doi.org/10.1007/BF02665978

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  • DOI: https://doi.org/10.1007/BF02665978

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