Abstract
Epitaxial films of Ag(111) were grown by molecular beam epitaxy (MBE) on small angle misoriented Si(111) substrates. The surface normal is tilted 0 to 6° away from the Si(111) axis in the [112] direction. Despite a 25% lattice mismatch, good quality 600-1200Å thick Ag films were grown on Si. The structure of the interface has been examined using transmission electron microscopy (TEM). Through a detailed analysis of the TEM diffraction data (SADP-selected area diffraction pattern) from planar as well as cross-sectional samples, we can determine the epitaxial relationship between Ag and Si. This includes the small tilt of individual Ag islands on Si, the periodicity of the finite terraces in Si, and the size of the ordered regions in Ag. The O-lattice formalism of Bollmann is applied to this system and compared with the experimental observations.
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