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Critical thickness determination of InxGa1-xAs/GaAs strained-layer system by transmission electron microscopy

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Abstract

The critical thicknesses of InxGa1-xAs/GaAs and GaAs/InxGa1-xAs/GaAs strained-layer systems were determined by transmission electron microscopy using the lift-off technique. The onset of misfit dislocation generation has been observed for the first time and the geometries of the misfit dislocations in both uncapped and capped layers correspond to the predicted models. A comparison is given between the predicted and experimental critical thicknesses.

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Authors and Affiliations

  1. Electron Microscopy Unit, The University of Sydney, 2006, NSW, Australia

    J. Zou

  2. Telecom Australia Research Laboratories, 770 Blackburn Road, 3168, Clayton, Australia

    B. F. Usher

  3. Electron Miroscope Unit, The University of Sydney, 2006, NSW, Australia

    D. J. H. Cockayne & R. Glaisher

Authors
  1. J. Zou
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  2. B. F. Usher
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  3. D. J. H. Cockayne
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  4. R. Glaisher
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Zou, J., Usher, B.F., Cockayne, D.J.H. et al. Critical thickness determination of InxGa1-xAs/GaAs strained-layer system by transmission electron microscopy. J. Electron. Mater. 20, 855–859 (1991). https://doi.org/10.1007/BF02665974

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  • DOI: https://doi.org/10.1007/BF02665974

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