Strain relaxation in epitaxial films Krishna RajanEugene FitzgeraldWilliam Jesser Foreword Pages: 701 - 701
The thermal stability of lattice mismatched InGaAs grown on patterned GaAs G. Patrick WatsonDieter G. AstBalu Pathangey OriginalPaper Pages: 703 - 708
Effects of mesa area and orientation on defects in strained InxGa1−xAs films grown by LPOMCVD J. R. JonesS. H. JonesD. K. Oh OriginalPaper Pages: 709 - 717
Structural study of epitaxial MN/AG multilayers S. NahmL. Salamanca-RibaB. T. Jonker OriginalPaper Pages: 719 - 722
Dislocation arrangements in gaas/ga1−xlnxas multilayers grown on (001), (111) and (112) substrates T. E. MitchellO. Unal OriginalPaper Pages: 723 - 734
Strain relief in compositionally graded Si1-xGex formed by high dose Ion implantation D. C. PaineD. J. HowardN. G. Stoffel OriginalPaper Pages: 735 - 746
An affine transformation description of epitaxial heterostructures S. DakshinamurthyK. Rajan OriginalPaper Pages: 747 - 752
A diffraction study of a heteroepitaxial system-Ag/Si(111) D. C. MckennaG. C. WangK. Rajan OriginalPaper Pages: 753 - 758
Modeling structural and chemical relaxation at the Al/Si epitaxial interface B. J. BartholomeuszT. -M. LuK. Rajan OriginalPaper Pages: 759 - 765
Nucleation of a 60° glide dislocation in two-dimensional or three-dimensional growth of epilayers K. JagannadhamJ. Narayan OriginalPaper Pages: 767 - 774
Laser processing of TiSi2 and CoSi2 thin films on silicon (100) substrates P. TiwariMary LongoJ. Narayan OriginalPaper Pages: 775 - 778
Dislocation density reduction in GaAs epilayers on Si using strained layer superlattices S. SharanJ. NarayanJ. C. C. Fan OriginalPaper Pages: 779 - 784
Misfit accommodation by steps in cubic materials G. J. ShifletJ. H. Van Der Merwe OriginalPaper Pages: 785 - 791
Metastable and equilibrium defect structure of II–VI/GaAs interfaces A. F. SchwartzmanR. Sinclair OriginalPaper Pages: 805 - 814
Surface stress effects on the thermodynamics of epitaxy R. C. CammarataK. Sieradzki OriginalPaper Pages: 815 - 817
Non-destructive evaluation of residual stresses in thin films via x-ray diffraction topography methods J. TaoL. H. LeeJ. C. Bilello OriginalPaper Pages: 819 - 825
Thermal relaxation in strained InGaAs/GaAs heterostructures J. KuiW. A. Jesser OriginalPaper Pages: 827 - 831
Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature C. A. VolkertE. A. FitzgeraldY. J. Mii OriginalPaper Pages: 833 - 837
Epitaxial necking in GaAs grown on pre-pattemed Si substrates E. A. FitzgeraldNaresh Chand OriginalPaper Pages: 839 - 853
Critical thickness determination of InxGa1-xAs/GaAs strained-layer system by transmission electron microscopy J. ZouB. F. UsherR. Glaisher OriginalPaper Pages: 855 - 859
Misfit accommodation at epitaxial interfaces K. RajanE. FitzgeraldW. A. Jesser OriginalPaper Pages: 861 - 867
Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition Y. C. WangR. F. Davis OriginalPaper Pages: 869 - 874
The formation of low resistance electrical contacts to shallow junction InP devices without compromising emitter integrity Navid S. FatemiVictor G. Weizer OriginalPaper Pages: 875 - 880
Design of epitaxial Metal/AiAs/GaAs structures for enhancement of the schottky barrier height T. L. CheeksT. SandsV. G. Keramidas OriginalPaper Pages: 881 - 884
Admittance spectroscopy and trapping phenomena of ZnO based varistors Bi-Shiou ChiouMing-Chih Chung OriginalPaper Pages: 885 - 890