1. Forward

   • D. J. Wolford

   EditorialNotes Pages: 1 - 2

2. An overview of early studies on persistent photoconductivity and other properties of deep levels in GaAsP: The effect of deep levels on light emitting devices

   • M. George Craford
   • G. E. Stillman
   • J. A. Rossi

   OriginalPaper Pages: 3 - 12

3. Confirmation of large lattice relaxation of theDX center by extended photo-ionization cross-section measurements

   • G. A. Northrop
   • P. M. Mooney

   OriginalPaper Pages: 13 - 22

4. Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in Al_xGa_1-xAs

   • P. M. Mooney
   • T. N. Theis
   • E. Calleja

   OriginalPaper Pages: 23 - 33

5. Bistability of theDX center in GaAs and Al_xGa_1-xAs, and experimental tests for negativeU of theDX level

   • T. N. Theis
   • P. M. Mooney
   • B. D. Parker

   OriginalPaper Pages: 35 - 48

6. Electron paramagnetic resonance and optically-detected magnetic resonance of donors in Al_xGa_1-xAs

   • T. A. Kennedy
   • E. Glaser

   OriginalPaper Pages: 49 - 54

7. Atomic structure ofDX centers: Theory

   • D. J. Chadi
   • S. B. Zhang

   OriginalPaper Pages: 55 - 58

8. Magnetic properties of donors in GaAsP

   • K. Khachaturyan
   • E. R. Weber
   • G. E. Stillman

   OriginalPaper Pages: 59 - 62

9. Analysis of the vacancy-interstitial model ofDX centers

   • T. N. Morgan

   OriginalPaper Pages: 63 - 70

10. Shallow impurities in quantum-well structures: A far infrared view

    • Y. J. Wang
    • J. -P. Cheng
    • B. D. McCombe

    OriginalPaper Pages: 71 - 78

11. Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions

    • J. Camassel
    • J. P. Laurenti
    • K. Grüter

    OriginalPaper Pages: 79 - 90

12. Growth of epitaxial Si_1-xGe_x layers at 750° C by VLPCVD

    • S. M. Jang
    • C. Tsai
    • R. Reif

    OriginalPaper Pages: 91 - 95

13. Use of tertiarybutylphosphine for OMVPE growth of (Al_xGa_1-x)o.51 In_0.49P

    • D. S. Cao
    • G. B. Stringfellow

    OriginalPaper Pages: 97 - 101

14. Stress in “cathodic” plasma oxides as a function of processing parameters

    • W. Dauksher
    • A. Reisman

    OriginalPaper Pages: 103 - 112

15. Very high purity In_0.53Ga_0.47As grown by molecular beam epitaxy

    • T. Mishima
    • M. Takahama
    • S. Takahashi

    OriginalPaper Pages: 113 - 116