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Very high purity In0.53Ga0.47As grown by molecular beam epitaxy

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Abstract

Very high purity In00.53Ga0.47As layers were grown by molecular beam epitaxy (MBE). Origins ofn-type impurities in undoped In0.53Ga0.47As grown on an InP:Fe substrate were systematically examined. The most possible origins were impurities diffusing from the InP:Fe substrate and those contained in As molecular beam. These impurities were dramatically reduced by using an InAlAs buffer layer and a growth condition of high substrate temperature and low As pressure. The lowest electron concentration of the In00.53Ga0.47As layer wasn = 1.8 × 1013 cm-3 with mobilitiesμ = 15200 cm2/Vs at 300 K andμ = 104000 cm2/Vs at 77 K.

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Authors and Affiliations

  1. Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, 185, Tokyo, Japan

    T. Mishima, M. Takahama, Y. Uchida, T. Tanoue & S. Takahashi

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  1. T. Mishima
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  2. M. Takahama
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  3. Y. Uchida
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  4. T. Tanoue
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  5. S. Takahashi
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Mishima, T., Takahama, M., Uchida, Y. et al. Very high purity In0.53Ga0.47As grown by molecular beam epitaxy. J. Electron. Mater. 20, 113–116 (1991). https://doi.org/10.1007/BF02651973

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  • DOI: https://doi.org/10.1007/BF02651973

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