Abstract
This paper reports the results of atmospheric pressure organometallic vapor phase epitaxial growth of (Al x Ga1-x )0.51 0.49P thin films using tertiarybutylphosphine (TBP) as the phosphorus source. The trimethylalkyls were used as group III sources. The growth temperature was 680° C. It was observed that V/III ratio dramatically affected the surface morphology and photoluminescence (PL). The epilayers grown at a V/III ratio lower than 60 had rough surfaces and weak PL emission. An input V/III ratio larger than 70 was required to obtain good surfaces and strong PL emission. Good quality (AlxGa1-x )0.51 0.49P epilayers forx ≤ 0.62 were obtained at a V/III ratio of 85. The surface morphologies were smooth except for the occurrence of dense oval-shaped hillocks forx > 0.42. The Al distribution coefficient using TBP is the same as for phosphine (PH3), which was used as the phosphorus source in previous AlGalnP growth. No parasitic reactions between TBP and trimethylalkyls were observed. 10 and 300 K PL emission was observed for all epilayers withx ≤ 0.62. However, the PL peak energy did not follow the band gap, as obtained for (AlxGa1-x )0.51 0.49P epilayers grown using PH3. The PL peak energy at both 10 and 300 K increased with increasingx forx ≤ 0.35, and then became nearly constant with further increases inx. In this region the PL is believed to be from a process involving a deep energy level, induced by an impurity from the TBP, bound to theX conduction band minimum. It was concluded that TBP has the potential to replace PH3 for OMVPE growth of Al-containing compounds, although the purity needs to be improved.
Similar content being viewed by others
References
D. S. Cao, A. W. Kimball and G. B. Stringfellow, J. Appl. Phys.67, 739 (1990).
D. P. Bour and J. R. Shealy, IEEE J. Quantum. Electron24, 1856 (1988).
M. Ikeda, K. Nakano, Y. Mori, K. Kaneko and N. Watanabe, J. Cryst. Growth77, 380 (1986).
Y. Ohba, M. Ishikawa. H. Sugawara, M. Yamamoto and T. Nakanishi, J. Cryst. Growth77, 374 (1986).
J. S. Yuan, C. C. Hsu, R. M. Cohen and G. B. Stringfellow, J. Appl. Phys.57, 1380 (1985).
G. B. Stringfellow, J. Electron. Mater.17, 327 (1988).
American Cyanamid Co., One Cyanamid Plaza, Wayne, NJ 07470.
C. A. Larsen and G. B. Stringfellow, J. Cryst. Growth75, 247 (1986).
C. H. Chen, C. A. Larsen, G. B. Stringfellow, D. W. Brown and A. J. Robertson, J. Cryst. Growth77, 11 (1986).
C. H. Chen, D. S. Cao and G. B. Stringfellow, J. Electron. Mater.17, 67 (1987).
R. R. Saxena, J. E. Fouquet, V. M. Sardi and R. L. Moon, Appl. Phys. Lett.53, 304 (1988).
F. G. Kellert, J. S. Whelan and K. T. Chan, J. Electron. Mater.18, 355 (1989).
S. R. Hurtz, J. M. Olson and A. Kibbler, J. Electron. Mater.18, 15 (1989).
Y. Takeda, S. Araki, M. Takemi, S. Noda and Sasaki, Proc. 16th Int. Symp. on GaAs and Related Comp. (1989).
G. B. Stringfellow, J. Cryst. Growth55, 42 (1981).
D. S. Cao, A. W. Kimball, G. S. Chen, K. L. Fry and G. B. Stringfellow, J. Appl. Phys.66, 5384 (1989).
S. H. Li, C. A. Larsen, N. I. Buchan and G. B. Stringfellow, J. Electron. Mater.18, 475 (1989).
T. F. Kuech, Mater. Sc. Rep.2, 1 (1987).
G. B. Stringfellow, J. Electron. Mater.10, 919 (1981).
‘Numerical Data and Function Relationship in Sc. and Tech., Landolt Bornstein series III’, ed. O. Madelung (Springer, Berlin 1986) Vol. 22 Part A.
G. Haacke, S. Watkins and E. Handler, Second Int. Conf. on InP and Related Mater. April 1990. Denver, CO.
D. Ritter, M. B. Panish, R. A. Hamm, D. Gershoni and I. Brener, Appl. Phys. Lett.56, 1448 (1990).
M. G. Craford, G. E. Stillman, J. A. Rossi and N. Holonyak, Jr., Phys Rev.168, 867 (1968).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Cao, D.S., Stringfellow, G.B. Use of tertiarybutylphosphine for OMVPE growth of (AlxGa1-x)o.51 In0.49P. J. Electron. Mater. 20, 97–101 (1991). https://doi.org/10.1007/BF02651971
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02651971