Abstract
The Electron Paramagnetic Resonance (EPR) and Optically-Detected Magnetic Resonance (ODMR) work on Si-donors in Al x Ga1- x As is reviewed in the context of the shallow-deep bistability (DX) problem. Three donor states are important. Little work has been published on donors tied to theT-minimum. However, there are many results forX-donors. In AlAs/GaAs heterostructures, well-resolved spectra reveal a donor state comprised of independentX x andX y valleys with theXz valley unpopulated due to the hetero-epitaxial strain. As Al mole fraction decreases, intervalley coupling is evident from the line positions and linewidths. The published attempts to observe and identify the deep (relaxed) state are inconclusive. Some suggestions for future work are presented.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
For reviews, see G. W. Ludwig and H. H. Woodbury, in Solid State Physics, Vol. 13 (Academic Press, New York, 1962), p. 223, and G. Lancaster, Electron Spin Resonance in Semiconductors (Plenum Press, New York, 1967).
For reviews, see B. C. Cavenett, Adv. Phys.30, 475 (1981), and J. J. Davies, J. Cryst. Growth72, 317 (1985).
T. A. Kennedy, R. Magno, E. Glaser and M. G. Spencer, in Defects in Electron. Mater., eds. M. Stavola, S. J. Pearton and G. Davies, Mat. Res. Soc. Symp. Proc. Vol. 104 (Materials Research Society, Pittsburgh, 1988), p. 555.
E. A. Montie and J. C. M. Henning, J. Phys. C.21, L311 (1988).
For a review, see T. A. Kennedy and E. Glaser, in Physics ofDX Centers in GaAs Alloys, ed. J. C. Bourgoin, Solid State Phenomena Vol. 10 (Sci-Tech Publications, Vaduz, Liechtenstein, 1990), p. 53.
W. Duncan and E. E. Schneider, Phys. Lett.7, 23 (1963).
C. Weisbuch and C. Hermann, Phys. Rev.B15, 816 (1977).
B. Rheinlander, H. Neumann, P. Fischer and G. Kuhn, Phys. Status SolidiB49, K167 (1972).
R. Bottcher, S. Wartewig, R. Bindemann, G. Kuhn and P. Fisher, Phys. Status SolidiB58, K23 (1973).
S. Wartewig, R. Bottcher and G. Kuhn, Phys. Status Solidi B70, K23 (1975).
E. Glaser, T. A. Kennedy and B. Molnar, in Shallow Impurities in Semicond. 1988, ed. B. Monemar, Inst. Phys. Conf. Ser. 95 (Institute of Physics, Bristol and Philadelphia, 1989), p. 233.
M. C. Rowland and D. A. Smith, J. Cryst. Growth38, 143 (1977).
E. Glaser, T. A. Kennedy, R. S. Sillmon and M. G. Spencer, Phys. Rev. B40, 3447 (1989).
T. A. Kennedy, E. R. Glaser, B. Molnar and M. G. Spencer, Int. Conf. on the Sc. and Tech. of Defect Control in Semicond., ed. K. Sumino (Elsevier, Amsterdam, to be published); and to be published.
W. Kohn and J. M. Luttinger, Phys. Rev.98, 915 (1955).
T. N. Morgan, Phys. Rev.B34, 2664 (1986).
T. N. Morgan, Phys. Rev. Lett.21, 819 (1968).
P. Lefebvre, B. Gil, H. Mathieu and R. Planel, Phys. Rev. B39, 5550 (1989).
J. C. M. Henning, E. A. Montie and J. P. M. Ansems, Proc. 15th Int. Conf. on Defects in Semicond., Mater. Sc. Forum,38–41, ed. G. Ferenczi (Trans Tech, Aedermansdorf, 1989), p. 1085.
P. M. Mooney, W. Wilkening, U. Kaufmann and T. F. Kuech, Phys. Rev. B39, 5554 (1989).
W. Wilkening and P. M. Mooney, private commun.
G. Feher, D. K. Wilson and E. A. Gere, Phys. Rev. Lett.3, 25 (1959).
D. J. Chadi and K. J. Chang, Phys. Rev. Lett.61, 873 (1988).
K. Khachaturyan, E. R. Weber and M. Kaminska, Proc. 15th Int. Conf. on Defects in Semicond., Mat. Sc. Forum,38–41, ed. G. Ferenczi (Trans Tech, Aedermansdorf, 1989), p. 1067.
K. A. Khachaturyan, D. D. Awschalom, J. R. Rozen and E. R. Weber, Phys. Rev. Lett.63, 1311 (1989).
R. J. Wagner, J. J. Krebs, G. H. Stauss and A. M. White, Solid State Commun.36, 15 (1980).
M. Fockele, B. K. Meyer, J. M. Spaeth, M. Heuken and K. Heime, Phys. Rev. B40, 2001 (1989).
E. R. Weber, in Microscopic Identification of Defects in Semiconductors, Mater. Res. Soc. Symp. Proc, vol. 46, eds. N. M. Johnson, S. G. Bishop and G. D. Watkins (Materials Research Society, Pittsburgh, 1985) p. 169.
H. J. vonBardeleben, J. C. Bourgoin, P. Basmaji and P. Gibart, Phys. Rev. B40, 5892 (1989).
See, for example, N. D. Killoran, B. C. Cavenett, M. Godlewski, T. A. Kennedy and N. D. Wilsey, J. Phys. C15, L723 (1982); and K. P. O’Donnell, K. M. Lee and G. D. Watkins, Solid State Commun.44, 1015 (1982).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kennedy, T.A., Glaser, E. Electron paramagnetic resonance and optically-detected magnetic resonance of donors in AlxGa1-xAs. J. Electron. Mater. 20, 49–54 (1991). https://doi.org/10.1007/BF02651964
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02651964