Photoreflectance characterization of semiconductors and semiconductor heterostructures Fred H. PollakH. Shen OriginalPaper Pages: 399 - 406
Characterization of stress in doped and undoped polycrystalline silicon before and after annealing or oxidation with laser raman spectroscopy M. KawataS. NadaharaT. Katoda OriginalPaper Pages: 407 - 411
Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering F. A. BaiocchiT. AmbroseL. J. Peticolas OriginalPaper Pages: 413 - 418
Growth and characterization of PECVD semi-insulating polysilicon films and resistors W. C. LaiS. S. AngP. V. Dressendorfer OriginalPaper Pages: 419 - 423
Deposition of high quality Sol-Gel oxides on silicon W. L. WarrenP. M. LenahanS. T. Reed OriginalPaper Pages: 425 - 428
Growth of AIGalnP in a high-speed rotating disk OMVPE reactor T. OhmineK. KataokaY. Sato OriginalPaper Pages: 429 - 433
The dependence of the electrical and optical properties of molecular beam epitaxial Ino.52Alo.48As on growth parameters: Interplay of surface kinetics and thermodynamics J. E. OhP. K. BhattacharyaM. Mattingly OriginalPaper Pages: 435 - 441
Effect of thermal treatment on the properties of YBa2Cu3O7-x thin films with multilayer Al/Cr/Yb metals as ohmic contact electrodes Q. X. JiaW. A. Anderson OriginalPaper Pages: 443 - 447
The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS P. K. McLartyD. E. IoannouH. L. Hughes OriginalPaper Pages: 449 - 452
Investigation of carbon incorporation in znse: Effects on morphology, electrical, and photoluminescence properties Konstantinos P. GiapisKlavs F. JensenSteven J. Pachuta OriginalPaper Pages: 453 - 462
Monolithic two-dimensional GaAs/AIGaAs laser arrays fabricated by chlorine lon-beam-assisted micromachining W. D. GoodhueK. RauschenbachG. D. Johnson OriginalPaper Pages: 463 - 469
Mode of growth in LP-MOVPE deposition of GalnAs/lnP quantum wells D. GrützmacherJ. HergethP. Balk OriginalPaper Pages: 471 - 479
Solid phase epitaxial growth of II-a fluorides on semiconductors by in-situ rapid isothermal processing R. SinghA. KumarH. S. Ullal OriginalPaper Pages: 481 - 485
Study of thin gate oxides grown in an ultra-dry/clean triple-wall oxidation furnace system Sukyoon YoonMarvin H. White OriginalPaper Pages: 487 - 493
Carbon reduction in triethylarsenic-grown GaAs films using chemically activated arsine as a co-reagent D. M. SpeckmanJ. P. Wendt OriginalPaper Pages: 495 - 499