Abstract
In general, during the deposition of epitaxial dielectrics, the substrate is heated at elevated temperatures, which is undesirable for a number of applications. In this paper we report the use of in-situ rapid isothermal processing for the solid phase epitaxial growth of CaF2 on Si (111) and BaF2 and SrF2 on InP (100) substrates. X-ray diffraction, TEM, SEM, and XPS studies of grown films have clearly established the superiority of in-situ annealing over ex-situ annealing.
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An erratum to this article is available at http://dx.doi.org/10.1007/BF02673350.
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Singh, R., Kumar, A., Thakur, R.P.S. et al. Solid phase epitaxial growth of II-a fluorides on semiconductors by in-situ rapid isothermal processing. J. Electron. Mater. 19, 481–485 (1990). https://doi.org/10.1007/BF02658009
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DOI: https://doi.org/10.1007/BF02658009