Abstract
We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.
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Warren, W.L., Lenahan, P.M., Brinker, C.J. et al. Deposition of high quality Sol-Gel oxides on silicon. J. Electron. Mater. 19, 425–428 (1990). https://doi.org/10.1007/BF02658001
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DOI: https://doi.org/10.1007/BF02658001