Growth of large crystals of (Pb,Ge)Te and (Pb,Sn)Te S. G. ParkerJ. E. PinnellR. E. Johnson OriginalPaper Pages: 731 - 746
Three garnet compositions for bubble domain memories J. W. NielsenS. L. BlankW. A. Biolsi OriginalPaper Pages: 693 - 707
Optical techniques useful for characterizing GaP crystals (review article) R. Z. Bachrach ReviewPaper Pages: 645 - 691
Bandgap and lattice constant of GaInAsP as a function of alloy composition R. L. MoonG. A. AntypasL. W. James OriginalPaper Pages: 635 - 644
Epitaxial garnet films by organometallic chemical vapor deposition M. E. CowherT. O. SedgwickJ. Landermann OriginalPaper Pages: 621 - 633
Control of the Fe2+ concentration in iron-doped lithium niobate W. PhillipsD. L. Staebler OriginalPaper Pages: 601 - 617
The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures J. M. GreenC. M. OsburnT. O. Sedgwick OriginalPaper Pages: 579 - 599
Adhesion, phase morphology, and bondability of reacttvely-bonded and frit-bonded gold and silver thick-film conductors T. T. Hitch OriginalPaper Pages: 553 - 577
Electromigration effects in aluminum alloy metallization Arthur J. Learn OriginalPaper Pages: 531 - 552
Amorphous magnetic materials for bubble domain and magneto-optics application J. J. CuomoP. ChaudhariR. J. Gambino OriginalPaper Pages: 517 - 529
Dislocations in vapor phase epitaxial GaP G. B. StringfellowP. F. LindquistR. A. Burmeister OriginalPaper Pages: 497 - 515
Influence of reactant gas vapor pressure on the electrical properties and the electroluminescent efficiency of GaAs0.62P0.38 J. W. PhilbrickW. C. Wuestenhoefer OriginalPaper Pages: 475 - 495
The preparation of CdSnP2/InP heterojunctions by liquid phase epitaxy from Sn-solution K. J. BachmannE. BuehlerG. W. Kammlott OriginalPaper Pages: 451 - 473
Thermally stimulated current measurements in N-type LEC GaP E. FabreR. N. BhargavaW. K. Zwicker OriginalPaper Pages: 409 - 430
Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAs K. K. ShihG. D. Pettit OriginalPaper Pages: 391 - 408
Effects of HCl and Cl2 additions on silicon oxidation kinetics Y. J. van der MeulenJ. G. Cahill OriginalPaper Pages: 371 - 389
Ultimate strength and morphological structure of eutectic bonds F. G. Yost OriginalPaper Pages: 353 - 369
Growth of ribbon-shaped crystals of gadolinium gallium garnet for bubble memory substrates J. C. SwartzB. SiegelH. Lingertat OriginalPaper Pages: 309 - 326
A laser scan technique for electronic materials surface evaluation D. R. OswaldD. F. Munro OriginalPaper Pages: 225 - 242
Some properties of Cu2SnSe3, Cu2GeSe3 and other A 2 I BIVC 3 VI compounds Walter Scott OriginalPaper Pages: 209 - 223
Annealing behavior of electroplated permalloy thin films. II A. GanguleeR. L. Anderson OriginalPaper Pages: 171 - 192
Photoresponse of high resistivity cadmium telluride between room temperature and 400°C R. FarrellG. EntineF. V. Wald OriginalPaper Pages: 155 - 170
Electromigration-induced failures in thin-film Al-Cu conductors B. N. AgarwalaL. BerenbaumP. Peressini OriginalPaper Pages: 137 - 153
Chalcogenide glasses as passive thin film structures for integrated optics R. M. Klein OriginalPaper Pages: 79 - 99
Vapor-grown In1−xGaxP electroluminescent junctions on GaAs C. J. NueseA. G. SigaiT. Zamerowski OriginalPaper Pages: 51 - 78
A stabilized tantalum diffusion barrier for the gold metallization system Aristotelis ChristouHoward M. Day OriginalPaper Pages: 25 - 35
Application of negative electron affinity materials to imaging devices F. R. HughesE. D. SavoyeD. L. Thoman OriginalPaper Pages: 9 - 23
Slater Pauling magnetization curve in transition metal phosphides Y. S. TyanL. E. Toth OriginalPaper Pages: 1 - 7
Novel garnet then film optical waveguides L. K. ShickC. D. BrandieM. A. Karr OriginalPaper Pages: 609 - 615
The melt growth and doping of CdGeP2 J. D. WileyE. BuehlerJ. H. Wernick OriginalPaper Pages: 601 - 607
Electroluminescent shockley diodes of GaAs and GaAsl−x, Px C. J. NueseJ. J. GannonC. R. Wronski OriginalPaper Pages: 571 - 599
Effect of Pb- and Te-saturation on carrier concentrations in impurity-doped PbTe A. J. Strauss OriginalPaper Pages: 553 - 569
Annealing behavior of electrodeposited gold containing entrapments K. C. JoshiR. C. Sanwald OriginalPaper Pages: 533 - 552
Physical properties of the As2 (Se,Te)3 glasses (Review article) David D. Thornburg ReviewPaper Pages: 495 - 532
Use of test structures and results of electrical tests for silicon-on-sapphire integrated circuit processes P. A. CrossleyW. E. Ham OriginalPaper Pages: 465 - 483
Use of test structures and results of electrical tests for silicon-on-sapphire integrated circuit processes P. A. CrossleyW. E. Ham OriginalPaper Pages: 465 - 465
