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Photoeffects in ZnSiP2

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Abstract

Photoconductive and photovoltaic effects have been studied in n-type ZnSiP2 platelets prepared from the vapor phase. The spectral responses extend from 1.5 eV to beyond 3.1 eV with peak signals in the 2.2-2.7 eV interval. Intrinsic (band-to-band) photoexcitation occurs at all energies, arising from the shallow energy dependence of the optical absorption edge. Trapping effects limit the photoconductive response time to 4xl0-3sec. Peak spectral responsivity and detectivity values of 840 V/W and 9.5xl09cm Hz 1/2 W−1respectively are found for one sample.

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Authors and Affiliations

  1. Honeywell Corporate Research Center, 55420, Bloomington, Minnesota

    Paul W. Kruse & Richard G. Schulze

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  1. Paul W. Kruse
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  2. Richard G. Schulze
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Kruse, P.W., Schulze, R.G. Photoeffects in ZnSiP2 . J. Electron. Mater. 3, 431–449 (1974). https://doi.org/10.1007/BF02652951

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